2017
DOI: 10.1016/j.solmat.2016.09.012
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Dynamic electrical behavior of halide perovskite based solar cells

Abstract: A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polarization relaxation, our model is able to reproduce qualitatively and quantitatively detailed features of measured I-V characteristics. Pre-poling effects are discussed, pointing out the differences between initially over- and under-polarized samples. In particular, the presence of the current over-shoot observed in the reverse characte… Show more

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Cited by 43 publications
(83 citation statements)
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“…However, depending on the pre-poling conditions I (nl) c can reach magnitudes similar to the measured current [30].…”
Section: The Dynamic Electrical Model (Dem)supporting
confidence: 64%
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“…However, depending on the pre-poling conditions I (nl) c can reach magnitudes similar to the measured current [30].…”
Section: The Dynamic Electrical Model (Dem)supporting
confidence: 64%
“…Then, an equivalent circuit model with constant capacitance was proposed [29]. The DEM, recently formulated by our group [30], is also based on an equivalent circuit, but includes a capacitor accounting for non-linear polarization effects as depicted in Fig. 1.…”
Section: The Dynamic Electrical Model (Dem)mentioning
confidence: 99%
“…Since P 0 > 0 for each relaxation time, normal hysteresis behavior is obtained for any τ as explained in Ref. [4]: the hysteresis is diminished for very small and very large scan rates, while the short-circuit current I sc increases with α. However, modifying τ the overall picture regarding the dynamic hysteretic effects is changing.…”
Section: Dynamic Hysteretic Effects -The τ Dependencementioning
confidence: 84%
“…We base our analysis on the dynamic electrical model (DEM) [4], which is able to accurately reproduce the experimental J-V characteristics. In particular, a unified picture comprising normal (NH) and inverted (IH) hysteresis in the same device structure subject to different bias pre-conditioning was recently given by DEM, validated by J-V measurements [5].…”
Section: Introductionmentioning
confidence: 99%
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