Dynamic Dual-Gate Bias Modulation for Linearization of a High-Efficiency Multistage PA

Lasser, Gregor; Duffy, Maxwell R.; Popović, Zoya

doi:10.1109/tmtt.2019.2909878

Cited by 16 publications

(10 citation statements)

References 26 publications

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“…The device under test (DUT) is driven by the radio frequency (RF) signal and the time‐aligned gate and drain voltages. Time alignment for both gate and drain signals is performed using the method described in [16]. An equalisation function is applied to gate signals to compensate for the parasitics of the interconnect to the DUT.…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…A level shift is introduced to bring the voltage down to that needed for the quiescent

V_{normalG}

. The instrumentation amplifier output is then connected to the fixtured MMIC PA through spring‐loaded pins [16].…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…A shortened 20 MHz test signal, with a probability density function (PDF) and PAPR similar to a noise‐like signal, is used for the optimisation routine. During the measurement sequence, the signal is repeated for each optimiser variation while a windowing is applied at the beginning and end of the signal to make it cyclic and easy to align [16].…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…Both types of SM effectively improve efficiency, but generally degrade linearity because the PA is in saturation over a larger dynamic power range. Gate modulation was shown to improve the linearity of amplifiers under static drain bias conditions in [15, 16], while simultaneous gate and drain modulation (GDM) was applied to improve supply modulator efficiency in [17], and to improve linearity and efficiency of a single transistor in [18].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Duffy

Lasser

Cappello

et al. 2020

IET Microwaves, Antennas & Propagation

Self Cite

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Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…A level shift is introduced to bring the voltage down to that needed for the quiescent

V_{normalG}

. The instrumentation amplifier output is then connected to the fixtured MMIC PA through spring‐loaded pins [16].…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Duffy

Lasser

Cappello

et al. 2020

IET Microwaves, Antennas & Propagation

Self Cite

View full text Add to dashboard Cite

“…The static bias connections are bonded directly to off-MMIC 100 pF singe-layer capacitors which are then bonded to the BB SMD capacitors for low-frequency bypassing. The RF and drain supply paths are aligned using methods described in [28]. The minimum pulse width of the DSM is limited to 8 ns by two chips on the MLD: the ADCMP601 logical comparator and the ISO721M digital isolator chip.…”

Section: Supply Modulation Test Benchmentioning

confidence: 99%

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Duffy

Lasser²,

Popović³

2020

Int. J. Microw. Wireless Technol.

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Abstract This paper presents a high-efficiency linear GaN K-band transmitter for broadband high peak-average power ratio (PAPR) signals. A GaN MMIC 18.5–24 GHz three-stage power amplifier with over 4 W peak output power, 20 dB saturated gain, and 40% peak PAE is supply-modulated with a four-level discrete dynamic supply GaN MMIC. For 100 MHz signals with ${\rm PAPR}\gt 10\, {\rm dB}$ , we demonstrate an average efficiency improvement from 14 to 20% with a simultaneous linearity improvement in noise power ratio (NPR) from 23 to 26 dB through a shaping function focused on gain linearization. For 250 MHz signal bandwidth, there is no observed degradation in NPR and the efficiency is improved by 5 percentage points. For discrete supply modulation, the switching transients between levels are experimentally investigated for wideband signals.

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A complete small‐signal model of GaAs dual‐gate HEMT

Huang

Chen

2022

Int J Numerical Modelling

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A complete small‐signal model of dual‐gate HEMT is proposed, considering the parasitic element effects. To extract the intrinsic elements accurately, the parasitic elements are eliminated by using a new method in this paper. It is realized by constructing two simple three‐port matrices and eliminating them with the features of π‐type and T‐type networks. This method is fast and accurate. Dual‐gate HEMTs could be regarded as a cascode connection of two single‐gate HMETs. A dual‐gate HEMT is fabricated on a commercial 0.25 μm GaAs technology to verify the proposed the extraction method. The result shows a good agreement between measured and simulated data over a wide frequency range.

show abstract

Dynamic Dual-Gate Bias Modulation for Linearization of a High-Efficiency Multistage PA

Cited by 16 publications

References 26 publications

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

A complete small‐signal model of GaAs dual‐gate HEMT

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