Dynamic crack modeling and analytical stress field analysis in single-crystal silicon using quantitative fractography

Moulins, Anthony; Ma, Lingyue; Dugnani, Roberto; Zednik, Ricardo J.

doi:10.1016/j.tafmec.2020.102693

Cited by 14 publications

(5 citation statements)

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“…The cleavage fracture anisotropy of silicon was studied by Perez et al [ 10 ], who suggested that cleavage and crack propagation anisotropy of monocrystalline silicon could be explained by lattice trapping. Moulins et al [ 11 ] modelled cracks together with the internal stress analysis of silicon crystal, which gave a deep comprehension of silicon fractography, since the structural orientation was supposed to be the reason for crystal anisotropy. Mylvaganam et al [ 12 ] revealed the deformation behaviors of three typical silicon crystal orientations of [001], [110] and [111].…”

Section: Introductionmentioning

confidence: 99%

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

et al. 2021

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Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.

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Section: Introductionmentioning

confidence: 99%

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

et al. 2021

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“…The analytical approach cannot directly simulate cracks but can provide detailed stress field information, which aids in predicting crack initiation. Moulins et al [ 93 ] employed quantitative fracture techniques to perform dynamic crack modeling and stress field analysis in monocrystalline silicon. By comparing the predicted fracture characteristics from the analytical model with experimental observations, they established the dynamic crack propagation behavior within the silicon and determined the asymptotic stress field at the crack tip.…”

Section: Models and Simulation For Dwsmentioning

confidence: 99%

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Zhou³

et al. 2023

Micromachines

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Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical stage in solar cell manufacturing. In order to improve the production yield of the cutting process, it is necessary to have a thorough understanding of the phenomena relating to the cutting parameters. This research reviews and summarizes the technology for the precision machining of monocrystalline silicon using diamond wire sawing (DWS). Firstly, mathematical models, molecular dynamics (MD), the finite element method (FEM), and other methods used for studying the principle of DWS are compared. Secondly, the equipment used for DWS is reviewed, the influences of the direction and magnitude of the cutting force on the material removal rate (MRR) are analyzed, and the improvement of silicon wafer surface quality through optimizing process parameters is summarized. Thirdly, the principles and processing performances of three assisted machining methods, namely ultrasonic vibration-assisted DWS (UV-DWS), electrical discharge vibration-assisted DWS (ED-DWS), and electrochemical-assisted DWS (EC-DWS), are reviewed separately. Finally, the prospects for the precision machining of monocrystalline silicon using DWS are provided, highlighting its significant potential for future development and improvement.

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“…On the one hand, the demand for semiconductor devices is continuing to rise worldwide in recent years owing to the growing demand to realize an advanced information society using Internet of Things (IoT) and Artificial Intelligence (AI) technologies. On the other hand, it is known that semiconductor materials, including Si, are susceptible to brittle fracture due to mechanical loading and strain caused by thermal expansion under adverse operating conditions, which is a major cause of fatal defects in devices 4 – 6 . Brittle materials often fail from defect heterostructures such as microcracks and voids, which act as fracture initiation points due to stress concentration, that grow and coalesce leading to total rupture of the material.…”

Section: Introductionmentioning

confidence: 99%

Electronic strengthening mechanism of covalent Si via excess electron/hole doping

Noda,

Sakaguchi,

Fujita

et al. 2023

Sci Rep

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Brittle fracture of a covalent material is ultimately governed by the strength of the electronic bonds. Recently, attempts have been made to alter the mechanical properties including fracture strength by excess electron/hole doping. However, the underlying mechanics/mechanism of how these doped electrons/holes interact with the bond and changes its strength is yet to be revealed. Here, we perform first-principles density-functional theory calculations to clarify the effect of excess electrons/holes on the bonding strength of covalent Si. We demonstrate that the bond strength of Si decreases or increases monotonically in correspondence with the doping concentration. Surprisingly, change to the extent of 30–40% at the maximum feasible doping concentration could be observed. Furthermore, we demonstrated that the change in the covalent bond strength is determined by the bonding/antibonding state of the doped excess electrons/holes. In summary, this work explains the electronic strengthening mechanism of covalent Si from a quantum mechanical point of view and provides valuable insights into the electronic-level design of strength in covalent materials.

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Dynamic crack modeling and analytical stress field analysis in single-crystal silicon using quantitative fractography

Cited by 14 publications

References 40 publications

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

Recent Advances in Precision Diamond Wire Sawing Monocrystalline Silicon

Electronic strengthening mechanism of covalent Si via excess electron/hole doping

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