Dynamic characteristics of high voltage 4H-SiC vertical JFETs

Mitlehner, H.; Bartsch, W.; Dohnke, Karl Otto; Friedrichs, Peter; Kaltschmidt, R.; Weinert, Ulrich; Weis, B.; Stephani, D.

doi:10.1109/ispsd.1999.764129

Cited by 35 publications

(6 citation statements)

References 4 publications

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“…The Baliga-Pair concept has been experimentally validated by extensive work done by Siemens [44,45] using their planar-gate vertical SiC JFET technology. These authors refer to the Baliga-Pair configuration as a 'cascode circuit'.…”

Section: Hybrid Gan/si Devicesmentioning

confidence: 99%

Gallium nitride devices for power electronic applications

Baliga

2013

Semicond. Sci. Technol.

519

264

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Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progress in development of vertical power devices from bulk GaN is reviewed followed by analysis of the prospects for GaN-on-Si HFET structures. Challenges and innovative solutions to creating enhancement-mode power switches are reviewed.

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Section: Hybrid Gan/si Devicesmentioning

confidence: 99%

Gallium nitride devices for power electronic applications

Baliga

2013

Semicond. Sci. Technol.

519

264

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“…• Cascode JFET (normally-off) [42]; this structure features a depletion-mode SiC JFET in cascode configuration with a low-voltage (i.e., ≈ 30 V) Si MOSFET. This approach allows to leverage the superior performance of the SiC JFET by turning it into a normally-off device with free-wheeling capability by means of a simple Si MOSFET.…”

Section: Silicon Carbide (Sic) [27]-[30]mentioning

confidence: 99%

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

2022

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in 1993, and the Ph.D. in Electrical Engineering from Politecnico di Torino, Italy, in 2002. He is a Full Professor of Power Electronics and Electrical Drives in the Energy Department "G. Ferraris" and Chairman of the Power Electronics Innovation Center (PEIC) at Politecnico di Torino, Italy. Dr. Bojoi published more than 200 papers covering electrical drives and power electronics for industrial applications, transportation electrification, power quality, and home appliances. He was involved in many research projects with industry for direct technology transfer aiming at obtaining new products. Dr. Bojoi is the co-recipient of 6 IEEE prize paper awards. Dr. Bojoi is a Co-Editor-In-Chief of the IEEE Transactions on Industrial Electronics.

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“…Our definitive answer is no! On the one hand the roll out of modern chip technology to highest voltage class traction IGBTs (3.3kV up to 6.5kV) is still in progress, on the other hand for the lower voltage range (600, 1200, 1700V) the next IGBT generations are already in the development phase: for low power applications there might be possible some nice advantages by a reverse conducting IGBT concept with an integrated freewheeling diode [7,8]. Especially in the medium to high power range, significant improvements can be foreseen in the switching performance by implementing the dynamic clamping feature [9, 10, 11] as well as more advanced sub-J.1 trench technology and next steps in the field stop technology for lower on state losses.…”

Section: F 13-kv Light-triggered Tandem Thyristor With Integrated Ovmentioning

confidence: 99%

Power semiconductors state-of-art and development trends

Lorenz

2007

2007 7th Internatonal Conference on Power Electronics

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WEB1·1Abstract-System integration and high power density of monolithic and multi-chip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimized to meet this target and to keep the overall ruggedness, sensitivity towards EMI and long term reliability, Silicon utilization system reliability and power units miniaturization are the key factors.Power semiconductors are primarily used to control the flow of energy between the energy source and the load, and to do so with great precision, with extremely fast control times and with low dissipated power.The drive towards rational use of energy, miniaturization of electrical systems and power management has given im petus to the revolutionary development of power semiconductors and power electronic systems over the last 20 years.In this paper new technologies, advanced devices concepts and future system aspect for industrial segments are discussed. In these fields of applications there are huge requirements towards system dynamic characteristic, overload capability, ruggedness behaviour and reliability.High operating tem peratures is required, in the industrial high blocking voltage capabilities are needed. I. HIGH-VOLTAGE THYRISTORS DEVELOPMENTHigh-power thyristors with direct light-triggering and integrated protection functions can be utilized advantageously for applications in which several thyristors are connected in series, because this enables a significant reduction in the number of components necessary for the construction of high-power thyristor converters. This in turn leads to greater reliability and lower fabrication costs. It applies in particular to High-Voltage DC (HVDC) transmission, Static Var Compensation (SVC), converters for medium voltage drives, and also to certain pulse power applications. B. 8-kV light-triggered thyristor with integratedprotection functionsThyristors in HVDC converter stations have to be protected against several failures that may appear under standard operation. There are three classical failure events thyristors must be protected against:-voltage pulses with a too high amplitude (overvoltage), -voltage pulses with a too high voltage ramp dVIdt, and 978-1-4244-1872-5/08/$25.00

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Dynamic characteristics of high voltage 4H-SiC vertical JFETs

Cited by 35 publications

References 4 publications

Gallium nitride devices for power electronic applications

Gallium nitride devices for power electronic applications

New FOM-Based Performance Evaluation of 600/650 V SiC and GaN Semiconductors for Next-Generation EV Drives

Power semiconductors state-of-art and development trends

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