Dynamic characteristics of dislocations in highly boron-doped silicon

Yonenaga, Ichiro; Taishi, Toshinori; Huang, Xinming; Hoshikawa, Keigo

doi:10.1063/1.1367407

Cited by 24 publications

(20 citation statements)

References 14 publications

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“…In fact, dislocation peaks such as D3 and D4 lines may still be present, but might be masked by the PL signal of continuous deep levels formed by the laser doping process [11]. It is additionally possible that the density of intrinsic dislocations (D3 and D4) might actually be suppressed due to the dislocation pinning effect of boron dopants in the laser-doped region, as reported previously for heavily doped silicon [32,33].…”

Section: Pl Spectra Of Excimer Laser Boron-doped Silicon Substratesmentioning

confidence: 88%

Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

et al. 2016

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Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/ edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm 2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laserinduced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

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Section: Pl Spectra Of Excimer Laser Boron-doped Silicon Substratesmentioning

confidence: 88%

Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

et al. 2016

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“…At present, CZ-Si crystals containing oxygen atoms at a concentration of ~10 18 cm -3 are used exclusively in industry on account of their high critical resolved shear stress for dislocation generation [12] and high mechanical strength in comparison with float-zone Si crystals [13]. Basically, oxygen impurities interstitially dissolved in Si crystals have been found to preferentially segregate on and immobilize dislocations, leading to high mechanical stability of the crystal [14].…”

Section: Introductionmentioning

confidence: 99%

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

Taishi

Hashimoto

Ise

et al. 2012

Journal of Crystal Growth

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We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B 2 O 3 ) and a silica crucible. When a Ge melt is partially covered with liquid B 2 O 3 , but only on the outer region of the melt surface, germanium-oxide (GeO 2 )-related particles forming naturally in the melt are effectively dissolved by the liquid B 2 O 3 . The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6  10 17 cm -3 can be grown from a melt fully covered by liquid B 2 O 3 with added GeO 2 powder. The reaction and transportation of oxygen atoms during the growth process using B 2 O 3 was investigated, revealing that liquid B 2 O 3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms.

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“…Imai and Sumino measured the dislocation velocity in boron doped silicon and reported the boron doping slightly decreases the dislocation velocity. 17) Yonenaga et al 20) reported that a certain level of stress is necessary to make dislocations start gliding in Czochralski (CZ) silicon and that the dislocation velocity is slightly increased by heavily boron doping at the high stress level. Erofeev et al 21) reported the effect of boron on dislocation velocity changes contrary below or above of a critical temperature.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Boron/Antimony on the Brittle-to-Ductile Transition in Silicon Single Crystals

2010

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The brittle-to-ductile transition (BDT) in boron or antimony doped Czochralski (CZ) silicon single crystals was investigated by three-point bending. The temperature dependence of the apparent fracture toughness was measured in three different crosshead speeds, indicating that the BDT temperature in boron doped silicon is the same as that in non-doped one while the BDT temperature in antimony doped silicon is lower than that in non-doped one. The activation energy was obtained from the deformation rate dependence of the BDT temperature, suggesting that the dislocation velocity in boron doped silicon is the same as that in non-doped while the dislocation velocity in antimony doped is larger than that in non-doped one.

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Dynamic characteristics of dislocations in highly boron-doped silicon

Cited by 24 publications

References 14 publications

Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3

The Effect of Boron/Antimony on the Brittle-to-Ductile Transition in Silicon Single Crystals

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