Dynamic Burstein shift in GaAs

Shah, Jagdeep; Leheny, R. F.; Lin, Chungwei

doi:10.1016/0038-1098(76)91233-3

Cited by 87 publications

(26 citation statements)

References 10 publications

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“…For reference, the reported n crit in bulk GaAs is ∼2 × 10 16 cm −3 . 267 The critical density for a range Chemical Reviews Review DOI: 10.1021/acs.chemrev.6b00136…”

Section: Interplay Between Excitons and Free Carriersmentioning

confidence: 99%

Intriguing Optoelectronic Properties of Metal Halide Perovskites

2016

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A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CHNHPbI) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

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“…For reference, the reported n crit in bulk GaAs is ∼2 × 10 16 cm −3 . 267 The critical density for a range Chemical Reviews Review DOI: 10.1021/acs.chemrev.6b00136…”

Section: Interplay Between Excitons and Free Carriersmentioning

confidence: 99%

Intriguing Optoelectronic Properties of Metal Halide Perovskites

2016

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“…53,54 This crystal field splitting invokes the broadening of the conduction and valence bands, and results in bandgap narrowing unless the center value of the valence and conduction bands shifts. The bandgap renormalization effects 55 via hot electrons might also induce bandgap narrowing; however, these hot-electron effects should start to occur within 3 ps when the hot electron is in the excited state. The time duration corresponding to the phenomena observed in our case was too large (10 ps) for the phenomena to be considered to be due only to hot-electron effects.…”

Section: Discussionmentioning

confidence: 99%

Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements

Hada

Norimatsu

Tanaka

et al. 2016

The Journal of Chemical Physics

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The atomic and electronic dynamics in the topological insulator (TI) Bi2Te3 under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novel mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi2Te3 trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.

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“…2 в работе [7]. Такая зависимость представляет перенормировку (сужение) ширины запрещенной зоны вследствие кулоновского взаимодействия носителей заряда [20][21][22][23] и экспериментально подтверждена в [7]. Указанная зависимость применима до тех пор, пока энергетический транспорт носителей заряда не возрастает настолько, что начинает возникать дефицит перенормировки [24].…”

Section: обсуждение результатовunclassified

Связь релаксации собственного стимулированного пикосекундного излучения GaAs с характерным временем остывания носителей заряда

Ageeva¹,

Bronevoǐ²,

Zabegaev³

et al. 2019

Физика И Техника Полупроводников

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During the powerful picosecond optical pumping of a thin (~ 1 µm) GaAs layer, a stimulated intense (up to 1 GW/cm^2) picosecond emission appeared. As was found, for a fixed density of the pump pulse energy, with an increase of its diameter the characteristic picosecond time τr of the emission and carrier density n relaxation increases. Due to interrelation of the density and the temperature of the carriers at high-intensity emission (in the saturation state of the emission amplification), time τr is associated with the characteristic temperature relaxation time τT of the photo-pumped carriers, which was determined earlier theoretically with the emission-caused carrier heating taken into account. The corresponding analytical expressions for τr as a functions of τT are consistent with the above experimental results.

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Dynamic Burstein shift in GaAs

Cited by 87 publications

References 10 publications

Intriguing Optoelectronic Properties of Metal Halide Perovskites

Intriguing Optoelectronic Properties of Metal Halide Perovskites

Bandgap modulation in photoexcited topological insulator Bi2Te3 via atomic displacements

Связь релаксации собственного стимулированного пикосекундного излучения GaAs с характерным временем остывания носителей заряда

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