Durability and structure of RF sputtered carbon-nitrogen thin film overcoats on rigid disks of magnetic thin film media

Yeh, T.; Lin, Chien-Li; Sivertsen, J.M.; Judy, J.

doi:10.1109/20.278774

Cited by 52 publications

(6 citation statements)

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“…3, all of the three testing heads exhibited some degree of wear damage where that of the uncoated head was the most severe and that of the carbon nitrogen coated head was the least. This is in agreement with the studies of Torng et al 4 and Yeh et al 5 which showed that carbon nitrogen has more sp 3 bonding and better wear performance than pure carbon. Figure 4 shows the SEM mapping results of the uncoated head surface, in which Al, Ti, and Cr were mapped.…”

Section: Resultssupporting

confidence: 93%

Comparison of tribological performance of pure carbon and carbon-nitrogen coated thin film head sliders

Wang

Silversten

Judy

et al. 1996

Journal of Applied Physics

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The wear performance of pure carbon and carbon nitrogen (C:N) coated thin film head sliders was evaluated by continuous drag testing (CDT). Comparison was made in light of protection of these two various carbon films. By studying the air bearing surfaces of the heads under atomic force microscopy (AFM) and secondary electron microscopy (SEM), it was found that during the CDT test, the head may fail before the disk fails and the area of Al2O3 is the most possible place where wear begins. There were small amounts of material transferred from head slider to disk, although no evidence of opposite transfer was found.

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Section: Resultssupporting

confidence: 93%

Comparison of tribological performance of pure carbon and carbon-nitrogen coated thin film head sliders

Wang

Silversten

Judy

et al. 1996

Journal of Applied Physics

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“…2,3 An increasing amount of attention, however, has been focused on the properties of amorphous carbon nitride (a-C:N) materials, with special attention to their tribological, optical, electronic, and chemical properties. These properties have been investigated with respect to their applications in wear-resistant [4][5][6][7] and optical [8][9][10] coatings, field emission devices, [11][12][13][14] hydrogen storage, [15][16][17] and electrochemical systems. 18,19 Various deposition processes, including both physical and chemical vapor deposition (CVD), have been explored to meet the demands of these applications, which generally require smooth, pinhole-free films with good adhesion to the underlying substrate.…”

Section: Introductionmentioning

confidence: 99%

CN Surface Interactions and Temperature-Dependent Film Growth During Plasma Deposition of Amorphous, Hydrogenated Carbon Nitride

Stillahn

Fisher

2009

J. Phys. Chem. C

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The properties of amorphous hydrogenated carbon nitride (a-C:N:H) materials create the potential for a variety of commercial applications. Plasma-enhanced chemical vapor deposition (PECVD) provides a convenient means of creating thin a-C:N:H films, but the chemistry that dominates the deposition remains unclear. The CN radical likely plays a role in the process; here, CH 3 CN was used as a single-source precursor for the generation of CN radicals and the PECVD of a-C:N:H films. Several plasma diagnostic techniques were used in an effort to clarify important deposition mechanisms, with special attention given to the role of CN radicals in the deposition process. Gas phase characterization methods, including laser-induced fluorescence (LIF) and optical emission spectroscopy (OES), provide insight into the formation and gas phase properties of CN(g). In addition, the behavior of CN at the plasma-surface interface was probed using the imaging of radicals interacting with surfaces (IRIS) technique. Results suggest that CN reacts at surfaces with high probability and little regard to changes in important deposition parameters. Finally, the growth rate and morphology of these films were characterized to investigate the role of substrate temperature in the deposition process.

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“…1,2 Apart from its predicted extreme hardness, carbon nitride may prove to be useful in device applications such as an insulator in III-V metal-insulator-semiconductor structures, much like its homolog, Si 3 N 4 , but without the attendant risk of introducing shallow impurities. The growth of C-N thin films employing deposition techniques such as reactive sputtering, [3][4][5][6][7][8][9][10][11][12][13] plasma chemical vapor deposition, 14,15 laser ablation, [16][17][18] ionassisted depositions, [19][20][21][22][23][24] low-energy ion implantation, 25,26 plasma arc, 27 and metalorganic chemical vapor deposition 28 has recently been reported. The occurrence of ␤-C 3 N 4 phase, probably the most stable form of C-N solid, in these films has also been suggested on the bases of electron and x-ray diffraction studies.…”

Section: Introductionmentioning

confidence: 99%

“…The occurrence of ␤-C 3 N 4 phase, probably the most stable form of C-N solid, in these films has also been suggested on the bases of electron and x-ray diffraction studies. [3][4][5][6][7][8][9][10][11] A chemically specific technique such as x-ray photoelectron spectroscopy ͑XPS͒ is required to determine chemical states of the atoms ͑C and N͒ present in these films. [3][4][5][6][7][8][9][10][11] A chemically specific technique such as x-ray photoelectron spectroscopy ͑XPS͒ is required to determine chemical states of the atoms ͑C and N͒ present in these films.…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films

Kumar

Butcher

Tansley

1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Pt:SnO2 thin films for gas sensor characterized by atomic force microscopy and xray photoemission spectromicroscopy J.Preparation of cubic boron nitride films by radio frequency bias sputtering Carbon nitride thin films prepared by radio frequency reactive sputtering of graphite in pure nitrogen plasma have been characterized by x-ray photoelectron spectroscopy ͑XPS͒ for probing the chemical bonding in the films. The multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that both the C and N atoms exhibit at least three types of chemical states, manifestative of different types of the C-N bonding present in the material. The presence of theoretically predicted ␤-C 3 N 4 phase in our C-N films has been suggested on the basis of XPS and optical data.

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Durability and structure of RF sputtered carbon-nitrogen thin film overcoats on rigid disks of magnetic thin film media

Cited by 52 publications

References 1 publication

Comparison of tribological performance of pure carbon and carbon-nitrogen coated thin film head sliders

Comparison of tribological performance of pure carbon and carbon-nitrogen coated thin film head sliders

CN Surface Interactions and Temperature-Dependent Film Growth During Plasma Deposition of Amorphous, Hydrogenated Carbon Nitride

X-ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films

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