2017
DOI: 10.1063/1.4989481
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Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

Abstract: Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that… Show more

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Cited by 11 publications
(16 citation statements)
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“…The temporal dynamics of free carriers is considered as the most crucial characteristic of a material, defining the efficiency of a semiconductor device. According to SRH model ( 20 , 21 ), the temporal dynamics, given by Eq. 1 , is mainly affected by energy states in the bandgap …”
Section: Resultsmentioning
confidence: 99%
“…The temporal dynamics of free carriers is considered as the most crucial characteristic of a material, defining the efficiency of a semiconductor device. According to SRH model ( 20 , 21 ), the temporal dynamics, given by Eq. 1 , is mainly affected by energy states in the bandgap …”
Section: Resultsmentioning
confidence: 99%
“…As we can see, this alternative transition is followed by predominant hole generation and the photogenerated hole concentration must be higher Δp > Δn than the concentration of photogenerated electrons. The distinctions between the electron excitation mechanisms from DL localized below or above E F were used for determining DL position in the band gap using the dual wavelength excitation [17]. A similar concept can be used in a p-type material where µ h > µ e .…”
Section: The Bipolar Conduction and The Interpretation Concept Of Pho...mentioning
confidence: 99%
“…The PHES measurements can be divided into two groups: the Hall signal measurements as a function of illumination intensity at various temperatures and the Hall signal measurements with different illuminating photon 3 energies. Some modifications of the experiment are possible inside the groups such as dual photon energy illumination [17] or time transients measurements [18]. In our previous research [18], we pointed out that PHES faces a serious problem in the p-type material where strong recombination of minority carriers (electrons) suppresses electron impact in Hall mobility (μ H ) and photoconductivity (PhC).…”
Section: Introductionmentioning
confidence: 99%
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“…The position of the trap E i in the bandgap determines the detrapping time. They used the Shockley-Read-Hall recombination model [98,99] and Shockley-Ramo theorem to describe the dynamics of free charges affected by deep and shallow traps. Because there was no analytical solution of the SHR model with more than a single trap, [48] they simulated the charge transport through Monte Carlo simulation.…”
Section: Methodsmentioning
confidence: 99%