Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode

Tsai, Bor-sheng; Chiu, Hung-Jen; Chen, Tai-Hong; Lai, Li‐Wen; Ho, Chai-Cheng; Liu, Day-Shan

doi:10.1016/j.apsusc.2015.03.179

Cited by 6 publications

(3 citation statements)

References 31 publications

(35 reference statements)

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“…The long-wavelength emission was dominated by the red luminescence which had been ascribed to the Ga-O deep level transition from the indiffusion of the oxygen atoms in the n-ZnO layer into the p-GaN epilayer. The emissions related to the NBE transition of n-ZnO (∼393 nm), DL transition of p-GaN (∼433 nm), and the transition from interfacial recombination due to the n-ZnO/p-GaN band offset (∼410 nm) were responsible for the short-wavelength luminescence [22]. The EL spectrum of the n-ZnO/p-GaN heterojunction LED emitted yellowish light at the coordinate of (0.468, 0.380) in the CIE color system, as shown in figure 3(b).…”

Section: Structurementioning

confidence: 99%

“…In the previous paper, Ho et al fabricated a n-ZnO/p-GaN-based LED that emitted broad near UV luminescence by optimizing the transparent electrode contact to the n-type ZnO [14]. The origin of the red, green-yellow, and blue-violet emission in the EL spectra from the n-ZnO/p-GaN-based LEDs annealed under various ambient to cause the interfacial diffusion, had also been discussed [22,23]. In addition, Zheng et al also fabricated an AlN-ZnO/ZnO/AlN-ZnO DH structure using the rf magnetron cosputtering technology.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Huang¹,

You²,

Yang³

et al. 2021

Mater. Res. Express

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In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p-type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p-GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n-ZnO/p-GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n-type ZnO film directly deposited onto the p-GaN epilayer. Meanwhile, the native defects in the n-ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n-ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.

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Section: Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Huang¹,

You²,

Yang³

et al. 2021

Mater. Res. Express

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“…Compared to the complicated and hazardous dry etching process for patterning GaN material in device fabrication, patterned ZnO is achievable by the common wet etching process, since it is very sensitive to most acids, such as hydrochloric acid. Accordingly, ZnO material is expected to be more promising than the current mainstream GaN-based device for short-wavelength optoelectronic applications [1][2][3][4]. Additionally, the growth in technology and temperature necessary to realize a ZnO film with quality c-axis crystallization is much simpler, such as when done by sputtering, pulse laser deposition, and hydrothermal methods, rather than for the epitaxial GaN layer, resulting in potentially low-cost fabrications and processes for ZnO-based devices [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Deposition of an AlN-ZnO/ZnO/AlN-ZnO Double Heterojunction Structure Using Radio Frequency Magnetron Cosputtering Technology

et al. 2019

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A symmetric AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure was consecutively deposited onto silicon substrate using cosputtering technology and then annealed at 700 °C under vacuum ambient for 30 min. The crystalline quality of the ZnO film in the heterojunction structure was significantly improved as verified by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Improvement on the crystalline structure was ascribed to the stress in the ZnO active film, which was effectively buffered by the underlayered AlN-ZnO layer. Native oxygen vacancies in the ZnO film also were effectively suppressed due to a little diffusion of the Al atoms from the cosputtered AlN-ZnO layer, and led to an increase in the carrier concentration. Such ZnO film deposited onto the homogeneous AlN-ZnO buffer layer emitted an intense near-band-edge emission, and the deep level emission was absent. The ultraviolet emission was further enhanced by covering an AlN-ZnO barrier laye, which was a consequence of the improvement on the carrier confinement. Accordingly, single ultraviolet emission with a quality ZnO crystalline structure, which is very promising for application in short-wavelength optoelectronic devices, was realized from the ZnO film sandwiched by the homogeneity of the cosputtered AlN-ZnO layers.

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The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

Wang

Gan

Zhang

et al. 2017

Applied Surface Science

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Dual-wavelength electroluminescence from an n-ZnO/p-GaN heterojunction light emitting diode

Cited by 6 publications

References 31 publications

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Enhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure

Investigation on the Deposition of an AlN-ZnO/ZnO/AlN-ZnO Double Heterojunction Structure Using Radio Frequency Magnetron Cosputtering Technology

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

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