Abstract:In this paper, Vertical Double Diffused MOSFET(VDMOS) with improved device structure is proposed. Gate engineering is applied in the proposed device and two devices namely dual stepped gate technology(DSGT) and modified dual stepped gate technology(m‐DSGT) are proposed here. Due to the effect of gate engineering switching ability is improved and area specific ON‐resistance is reduced. Devices are simulated using Silvaco Atlas software. Breakdown voltages for conventional and m‐DSGT are 278.63V and 280.02V, res… Show more
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