Dual-poly CVD HfO/sub 2/ gate stack for sub-100 nm CMOS technology

MBE-grown high gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nano-electronics

“…Recently, nano-technology has driven intense research on high k gate dielectric layers in nanoscale on Si as well as on compound semiconductor surfaces due to their importance in fundamental science and technological applications [1][2][3][4][5]. According to the latest International Technology Roadmap for Si, the rapid shrinkage of transistor [9][10].…”