Dual-mode thin film bulk acoustic wave resonators for parallel sensing of temperature and mass loading

Garcia‐Gancedo, Luis; Pedrós, J.; Zhao, Xiubo; Ashley, Greg; Flewitt, Andrew J.; Milne, W. I.; Ford, Chris; Lu, Jian R.; Luo, Jikui

doi:10.1016/j.bios.2012.06.023

Cited by 36 publications

(30 citation statements)

References 23 publications

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“…The bulk materials are generally brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex designed electrodes. Thin film materials present several distinct advantages over bulk materials in terms of device design flexibility, cost and easiness of fabrication and integration other electronic devices Guttenberg et al 2005;Garcia-Gancedo et al 2012). Furthermore, thin film SAW devices could be made on flexible substrates such as metallic or polymer foils and plates for flexible SAW-based sensors, display and microfluidics devices (Jin et al 2013).…”

Section: Introductionmentioning

confidence: 99%

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Zhou

Pang

Garcia‐Gancedo

et al. 2014

Microfluid Nanofluid

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To date, most surface acoustic wave (SAW) devices have been made from bulk piezoelectric materials, such as quartz, lithium niobate or lithium tantalite. These bulk materials are brittle, less easily integrated with electronics for control and signal processing, and difficult to realize multiple wave modes or apply complex electrode designs. Using thin film SAWs makes it convenient to integrate microelectronics and multiple sensing or microfluidics techniques into a lab-on-a-chip with low cost and multi-functions on various substrates (silicon, glass or polymer). In the work, aluminum nitride (AlN)-based SAW devices were fabricated and characterized for discrete microfluidic (or droplet based) applications. AlN films with a highly c-axis texture were deposited on silicon substrates using a magnetron sputtering system. The fabricated AlN/ Si SAW devices had a Rayleigh wave mode at a frequency of 80.3 MHz (with an electromechanical coupling coefficient k 2 of 0.24 % and phase velocity v p of 5,139 m/s) and a higher-frequency-guided wave mode at 157.3 MHz (with a k 2 value of 0.22 % and v p of 10,067 m/s). Both modes present a large out of band rejection of *15 dB and were successfully applied for microfluidic manipulation of liquid droplets, including internal streaming, pumping and jetting/ nebulization, and their performance differences for microfluidic functions were discussed. A detailed investigation of the influences of droplet size (ranging from 3 to 15 lL) and RF input power (0.25-68 W) on microdroplet behavior has been conducted. Results showed that pumping and jetting velocities were increased with an increase of RF power or a decrease in droplet size.

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Section: Introductionmentioning

confidence: 99%

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Zhou

Pang

Garcia‐Gancedo

et al. 2014

Microfluid Nanofluid

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“…In order to improve the performance of FBAR devices, a large part of research on FBAR temperature characteristics has focused on how to reduce the effect of temperature fluctuation, such as by adding a silicon dioxide compensation layer [41], embedding a microheater layer between the supporting layer and piezoelectric layer, or stiffening (mechanically or electrically) the piezoelectric film [42]. However, an alternative approach could be utilizing the effect of temperature on FBAR to fabricate FBAR temperature sensors, for which there is a huge market [43]. Figure 7a shows the frequency response of the PVDF FBAR to temperature variation.…”

Section: Temperature Sensingmentioning

confidence: 99%

A Flexible Film Bulk Acoustic Resonator Based on β-Phase Polyvinylidene Fluoride Polymer

Jin

Dong

et al. 2020

Sensors

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This paper reports a novel flexible film bulk acoustic resonator (FBAR) based on β-phase polyvinylidene fluoride (PVDF) piezoelectric polymer. The proposed device was simulated and evaluated; then, a low-temperature photolithography process with a double exposure method was developed to pattern the electrodes for the device, which enabled the device to retain the piezoelectric properties of the β-phase PVDF film. Results showed that the β-phase PVDF FBARs had a resonant frequency round 9.212 MHz with a high electromechanical coupling coefficient (k 2 ) of 12.76% ± 0.56%. The device performed well over a wide bending-strain range up to 2400 µε owing to its excellent flexibility. It showed good stability as a strain sensor with a sensitivity of 80 Hz/µε, and no visible deterioration was observed after cyclic bending tests. The PVDF FBAR also exhibited an exceptionally large temperature coefficient of frequency (TCF) of −4630 ppm/K, two orders of magnitude larger than those of other FBARs based on common inorganic piezoelectric materials, extraordinarily high sensitivity for temperature sensing. All results showed that β-phase PVDF FBARs have the potential to expand the application scope for future flexible electronics.with high-cost equipment for the deposit of these highly crystalline films can limit their widespread application and commercialization.Polyvinylidine difluoride (PVDF), a well-known high-performance piezoelectric polymer, could be a strong candidate as a new flexible FBAR material due to its remarkable inherent flexibility, lightness, and robustness, as well as its high piezoelectric response and low acoustic impedance, similar to those of biological tissue. Since the discovery of the piezoelectric activity of the PVDF material by Kawai in 1969 [9], PVDF-based piezoelectric polymer has been used in a wide range of actuators and sensors, such as underwater acoustic transducers [10], ultrasonic inspection sensors [11], acceleration sensors [12], surface acoustic-wave devices [13], pressure sensors [14], and energy harvesters [15]. In addition, it has been utilized in medical and biological applications such as artificial muscles and organs [16], medical imaging [17], and blood-flow monitors [18]. However, a PVDF polymer cannot be processed by a standard lithography process, limiting its application in MEMS devices and electronics.In this paper, we report on the feasibility of using a β-phase PVDF polymer for the development of FBARs. In this research, an FBAR device was designed with a 100 µm thick β-phase PVDF film sandwiched between two metal electrodes with a simulated resonant frequency of 9.418 MHz. A facile and reliable fabrication method was developed to successfully fabricate β-phase PVDF FBAR, which is compatible with the standard lithography process. The stability of the crystalline phase and the piezoelectricity of the β-phase PVDF film after the fabrication process were verified by X-ray diffraction (XRD) and piezoelectric coefficient d 33 measurement, respectively. The performance of the β...

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“…A shift of the resonant frequency with temperature changes of a gravimetric biosensor is even more dramatic, because it could generate a false positive. One of the solutions that has been adopted, especially in the area of sensors, is the simultaneous measurement of temperature and another parameter of interest, for example pressure or, commonly, mass loading, so that both variations can be independently identified [10,11]. This technique requires the generation of another resonant peak by increasing the thickness of a SiO 2 layer located below the piezoelectric layer, which causes a decrease in the quality factor of the device.…”

Section: Introductionmentioning

confidence: 98%

ZnO/AlN stacked BAW resonators with double resonance

DeMiguel-Ramos

Clément

Goicuria

et al. 2014

2014 IEEE International Ultrasonics Symposium

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We have fabricated BAW resonators with a piezoelectric bilayer that combines ZnO and AlN films. These stacked devices show two resonances that could be used to simultaneously track temperature variations and another parameter, such as loaded mass or pressure. We have assessed the crystal quality of the stacked piezoelectric films using XRD and FT-IR. The TCF of the devices has been measured in a temperature range from 25°C to 100°C. Both resonances show different TCFs, of -15.8 (ppm/°C) and -19.9 (ppm/°C), and quality factors Q over 500, which make them suitable for measurement of two parameters.

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Dual-mode thin film bulk acoustic wave resonators for parallel sensing of temperature and mass loading

Cited by 36 publications

References 23 publications

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

Discrete microfluidics based on aluminum nitride surface acoustic wave devices

A Flexible Film Bulk Acoustic Resonator Based on β-Phase Polyvinylidene Fluoride Polymer

ZnO/AlN stacked BAW resonators with double resonance

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