Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing

Rahman, Md. Hafijur; Thakur, J. S.; Rimai, L.; Perooly, Soma; Naik, R.; Zhang, Linfeng; Auner, Gregory W.; Newaz, Golam

doi:10.1016/j.snb.2007.07.064

Cited by 23 publications

(9 citation statements)

References 17 publications

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“…Moreover, the aforementioned WBG materials have excellent reverse recovery characteristics, and for this reason they require less time and energy to return to the base line signal. In addition they are less susceptible to electromag- GaN [33][34][35][36][37][38][39][40][41][42] InN [43] AlN [44][45][46] SiC [47][48][49][50][51][52][53] Ion sensing…”

Section: New Semiconductor Substratesmentioning

confidence: 99%

Novel semiconductor materials for the development of chemical sensors and biosensors: A review

Chaniotakis

Sofikiti

2008

Analytica Chimica Acta

131

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Section: New Semiconductor Substratesmentioning

confidence: 99%

Novel semiconductor materials for the development of chemical sensors and biosensors: A review

Chaniotakis

Sofikiti

2008

Analytica Chimica Acta

131

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“…La forma en la que esté presente, forma metálica u oxidada, dependerá de su concentración y el gas interaccionante [12]. [13][14][15][16][17][18].…”

Section: Sno 2 Dopado Con Pd (Pd/sno 2 )unclassified

O Uso Da Linguagem Matemática Para O Ensino De Física Na Educação Básica

Santos¹,

Santos²

2021

Formação Interdisciplinar Das Ciências Exatas: Conhecimentos E Pesquisas

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Direitos para esta edição cedidos à Atena Editora pelos autores. Todo o conteúdo deste livro está licenciado sob uma Licença de Atribuição Creative Commons. Atribuição-Não-Comercial-NãoDerivativos 4.0 Internacional (CC BY-NC-ND 4.0).O conteúdo dos artigos e seus dados em sua forma, correção e confiabilidade são de responsabilidade exclusiva dos autores, inclusive não representam necessariamente a posição oficial da Atena Editora. Permitido o download da obra e o compartilhamento desde que sejam atribuídos créditos aos autores, mas sem a possibilidade de alterá-la de nenhuma forma ou utilizá-la para fins comerciais. Todos os manuscritos foram previamente submetidos à avaliação cega pelos pares, membros do Conselho Editorial desta Editora, tendo sido aprovados para a publicação com base em critérios de neutralidade e imparcialidade acadêmica.A Atena Editora é comprometida em garantir a integridade editorial em todas as etapas do processo de publicação, evitando plágio, dados ou resultados fraudulentos e impedindo que interesses financeiros comprometam os padrões éticos da publicação. Situações suspeitas de má conduta científica serão investigadas sob o mais alto padrão de rigor acadêmico e ético.

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“…The manufactured SBDs show promise for use in combined sensors for measuring both temperature and UV-light. Further sensing capabilities are being explored in related work [ 7 , 8 , 9 , 10 , 11 , 12 ]. In this study, Schottky barrier diode (SBD)-based temperature sensor samples were fabricated by RF sputtering deposition of AlN onto an n-type 4H-SiC substrate.…”

Section: Introductionmentioning

confidence: 99%

Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors

et al. 2021

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In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N2 or O2 gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current–voltage (I–V) curve. The voltage–temperature (V–T) characteristics of the sensor were extracted from the current–voltage–temperature (I–V–T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N2-annealed, and O2-annealed samples, respectively.

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Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing

Cited by 23 publications

References 17 publications

Novel semiconductor materials for the development of chemical sensors and biosensors: A review

Novel semiconductor materials for the development of chemical sensors and biosensors: A review

O Uso Da Linguagem Matemática Para O Ensino De Física Na Educação Básica

Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors

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