Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory

Fong, Scott W.; Neumann, Christopher M.; Yalon, Eilam; Rojo, Miguel Muñoz; Pop, Eric; Wong, H.-S. Philip

doi:10.1109/ted.2017.2756071

Cited by 29 publications

(16 citation statements)

References 23 publications

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“…The Raman temperature reading can be used to calibrate the actual SThM profiles. Fong et al applied the above technique on their dual‐layer dielectric stack PCM composed of SiO 2 /Al 2 O 3 insulator and showed that a 60% reduction can be observed in the reset energy in comparison with SiO 2 ‐isolated devices. Similarly, Deshmukh et al measured the heating of conductive filaments in 5 nm HfO 2 RRAM devices by Passive‐SThM, which was calibrated by self‐heated metal lines.…”

Section: Applicationsmentioning

confidence: 99%

A Review on Principles and Applications of Scanning Thermal Microscopy (SThM)

Zhang

Zhu

Hui

et al. 2019

Adv Funct Materials

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107

106

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As the size of materials, particles, and devices shrinks to nanometer, atomic, or even quantum scale, it is more challenging to characterize their thermal properties reliably. Scanning thermal microscopy (SThM) is an emerging method to obtain local thermal information by controlling and monitoring probe-sample thermal exchange processes. In this review, key experimental and theoretical components of the SThM system are discussed, including thermal probes and experimental methods, heat transfer mechanisms, calibration strategies, thermal exchange resistance, and effective heat transfer coefficients. Additionally, recent applications of SThM to novel materials and devices are reviewed, with emphasis on thermoelectric, biological, phase change, and 2D materials.

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Section: Applicationsmentioning

confidence: 99%

A Review on Principles and Applications of Scanning Thermal Microscopy (SThM)

Zhang

Zhu

Hui

et al. 2019

Adv Funct Materials

Self Cite

107

106

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“…However, the main part of the power used during the programming operations of a PCM device is represented by the heat losses [1], making the PCM performance to be far from the adiabatic limit represented by a perfect thermal isolation and zero losses [7]. Only in the last years, with the increasing in maturity of the PCM technology, the engineering of thermal barriers and of the thermal conductivity of the surrounding dielectrics became the object of preliminary studies confirming the huge improvement achievable already in analytic devices [8,9] and demonstrating its even higher necessity in ultra scaled PCM [10]. In this framework, we propose the investigation of the thermal improvement in heater-based (i.e.…”

Section: Introductionmentioning

confidence: 99%

Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement

Serra

Lefèvre

Cueto

et al. 2021

Solid-State Electronics

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In this paper we compare the performances of SiN with respect to an optimized SiC encapsulation in Wall based Phase-Change Memory (PCM) integrating a Ge-rich Ge-Sb-Te alloy (GGST) suitable for high temperature stability in automotive applications. Thanks to the electrical characterization of 4kb arrays, 3D electro-thermal simulations and TEM analyses performed on programmed devices, we demonstrate the higher programming efficiency in SiC-based PCM devices, thanks to the lower thermal conductivity of the optimized encapsulation. Indeed, the uniform temperature profile achieved in the active layer of SiC encapsulated PCM leads to a retention of one hour at 250 • C. A theoretical model is here proposed to describe the electro-thermal behavior of the device, linking the electrical properties, such as the resistance as a function of current characteristics, to the thermal conductivity of the materials that constitute the device. Finally, thanks to our findings, we provide some guidelines to achieve drastic current reduction via the thermal engineering of the next generation PCM technology.

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“…We have also measured similar peaks in uncapped GST films after exposure to high laser power and formation of dark spots in the film (Supplemental Information Section 2). These peaks were also measured in other sets of lateral GST devices which were capped with different oxides 31 .…”

Section: B Raman Spectroscopy Of Gst Devicesmentioning

confidence: 76%

Spatially Resolved Thermometry of Resistive Memory Devices

Yalon

Deshmukh

Rojo

et al. 2017

Sci Rep

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The operation of resistive and phase-change memory (RRAM and PCM) is controlled by highly localized self-heating effects, yet detailed studies of their temperature are rare due to challenges of nanoscale thermometry. Here we show that the combination of Raman thermometry and scanning thermal microscopy (SThM) can enable such measurements with high spatial resolution. We report temperature-dependent Raman spectra of HfO2, TiO2 and Ge2Sb2Te5 (GST) films, and demonstrate direct measurements of temperature profiles in lateral PCM devices. Our measurements reveal that electrical and thermal interfaces dominate the operation of such devices, uncovering a thermal boundary resistance of 28 ± 8 m2K/GW at GST-SiO2 interfaces and an effective thermopower 350 ± 50 µV/K at GST-Pt interfaces. We also discuss possible pathways to apply Raman thermometry and SThM techniques to nanoscale and vertical resistive memory devices.

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Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory

Cited by 29 publications

References 23 publications

A Review on Principles and Applications of Scanning Thermal Microscopy (SThM)

A Review on Principles and Applications of Scanning Thermal Microscopy (SThM)

Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement

Spatially Resolved Thermometry of Resistive Memory Devices

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