Dual insulated-gate field-effect transistors with cadmium sulfide active layer and a laminated polymer dielectric

Meth, Jeffrey S.; Zane, Steve G.; Nunes, G.

doi:10.1063/1.1704875

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…Due to its desirable properties, it finds use in photovoltaic solar cells [2,3], piezo transducers [4], photoresistors, luminescence devices [5], Schottky diodes and metal-semiconductor field effect transistors (MESFETs) [6], heterojunction diodes [7], insulated gate thin film transistors [8], and gas sensors [9]. It is also used in microelectronics, nonlinear optics, catalysis, photoelectrochemistry [10], and in photodetectors [11].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Echendu

Dejene

Dharmadasa

et al. 2017

International Journal of Photoenergy

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Electrochemical deposition and characterization of nanocrystallite-CdS thin films for thin film solar cell application are reported. The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. X-ray diffraction study reveals that the as-deposited films contain mixed phases of hexagonal and cubic CdS crystallites with large amounts of internal strain and dislocation density. Postdeposition annealing results in phase transformation which leaves the films with only the hexagonal crystal phase and reduced strain and dislocation density while increasing the crystallite sizes from 21.0-42.0 nm to 31.2-63.0 nm. Photoelectrochemical cell study shows that all the CdS films have n-type electrical conductivity. Optical characterization reveals that all samples show similar transmittance and absorbance responses with the transmittance slightly increasing towards higher growth voltages. All the annealed films show energy bandgap of 2.42 eV. Scanning electron microscopy and energy dispersive X-ray analyses show that grains on the surface of the films tend to get cemented together after annealing with prior CdCl 2 treatment while all the films are S-rich.

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Section: Introductionmentioning

confidence: 99%

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Echendu

Dejene

Dharmadasa

et al. 2017

International Journal of Photoenergy

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“…In dual-gate field-effect transistors, a semiconducting layer is sandwiched between two dielectrics to which two gate electrodes bond. [1] In 2005, Cui and Liang applied the concept of dual gate to organic transistors to attain dual-gate organic field-effect transistors (DG-OFETs). [2] In their devices, pentacene was the semiconducting material, thermal SiO 2 was the bottom dielectric, self-assembled SiO 2 was the top dielectric, the bottom-gate electrode was a highly doped silicon wafer, and the top-gate electrode was aluminum.…”

Section: Introductionmentioning

confidence: 99%

Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors

Chen,

Ko,

Chen

et al. 2023

Adv Elect Materials

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Four conjugated polymers are integrated with a bacteriorhodopsin D94N‐HmBRI in organic field‐effect transistors (OFETs) with the device architecture of doped Si bottom gate/SiO2 bottom electric/semiconducting polymer/Au electrodes/D94N‐HmBRI top dielectric. Photosensitivity of D94N‐HmBRI in the devices is validated. It is proposed that light activates the conformational change of all‐trans retinal to 13‐cis retinal in D94N‐HmBRI. The D94N‐HmBRI layer then applies momentary dipoles to the semiconductors, affecting threshold voltage, resulting in photosensitivity. Film‐thickness variation, capacitance determination, and grazing‐incidence X‐ray scattering are performed to support the proposed working principle. Quasi dual‐gate OFETs with a highly doped silicon wafer as the bottom gate and light as the top gate are thus realized by combining conjugated polymers with D94N‐HmBRI.

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Facile fabrication and characterization of modified spray deposited cadmium sulphide thin films

Shaikh¹,

Shkir

Masumdar³

2019

Physica B: Condensed Matter

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Dual insulated-gate field-effect transistors with cadmium sulfide active layer and a laminated polymer dielectric

Abstract: Articles you may be interested inDirect patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric Cadmium sulfide thin-film transistors fabricated by low-temperature chemical-bath deposition

Cited by 6 publications

References 9 publications

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage

Integrating Conjugated Polymers with Bacteriorhodopsin to Realize Quasi Dual‐Gate Organic Field‐Effect Transistors

Facile fabrication and characterization of modified spray deposited cadmium sulphide thin films

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