Dual growth modes in ion bombarded Si surfaces

Abstract

Articles you may be interested inRipple formation on atomically flat cleaved Si surface with roughness of 0.038 nm rms by low-energy Ar 1 + ion bombardment J.Abstract. Morphological studies were done on Si (001) surfaces after rastering them with a 1 keV O 2 + Keywords: Sputtering, atomic force microscopy, morphology evolution ion beam at an angle. The resulting mounded morphology was studied using atomic force microscopy (AFM) measurements. The roughness at different length scales were further extracted and quantified from AFM measurements using scaling analysis. Results indicate two growth regimes of the evolving surface which were evident from the power spectral density (PSD) and interface width analysis of the eroded surfaces. Initially the growth is unstable followed by a stable regime of the nanostructures evolved after about 35 minutes of erosion. Temporal studies done on these surfaces show the onset of shadowing at higher sputtering times thus indicating the breakdown of the growth model at these times. 68.49.Sf, 68.37.Ps, Samples were bombarded for 6, 23, 35, 46, 75 and 100 minutes. Roughness was calculated for all possible length scales for the scanned AFM images of 0, 6, 23, 35, 46, 75 and 100 minutes using a Fortran program. PACS: