Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Chen, Zhuoyu; Yuan, Huatang; Xie, Yanwu; Lü, Di; Inoue, Hisashi; Hikita, Yasuyuki; Bell, C. H.; Hwang, Harold Y.

doi:10.1021/acs.nanolett.6b02348

Cited by 50 publications

(66 citation statements)

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“…Among the recently synthesized structures, the transition metal oxide superlattices (SL's), for example, play a key role, as they offer the potential for future use in devices [2]. LaAlO 3 -SrTiO 3 superlattices, for instance, have been used to fabricate diodes with with room-temperature breakdown voltages of up to 200 V [3], as well as field-effect devices [4][5][6]. Most of the compounds used in these superlattices are characterized by the presence of strong electronic correlations, that give rise to complex collective quantum phases.…”

mentioning

confidence: 99%

Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices

Mondaini

Paiva

2017

Phys. Rev. B

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We study magnetic, transport and thermodynamic properties of the half-filled two-dimensional (2D) Hubbard model with layered distributed repulsive interactions using unbiased finite temperature quantum Monte Carlo simulations. Antiferromagnetic long-ranged correlations at T = 0 are confirmed by means of the magnetic structure factor and the onset of short-ranged ones is at a minimum temperature, which can be obtained by peaks in susceptibility and specific heat following a random-phase-approximation (RPA) prediction. We also show that transport is affected in the large interaction limit and is enhanced in the non-repulsive layers suggesting a change of dimensionality induced by increased interactions. Lastly, we show that by adiabatically switching the interactions in layered distributed patterns reduces the overall temperature of the system with a potential application in cooling protocols in cold atoms systems.

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confidence: 99%

Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices

Mondaini

Paiva

2017

Phys. Rev. B

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“…4 show the calculated potential well, its bound states and the band dispersions along k x , for n tot = 3.39 × 10 13 cm −2 (b)-(c) and 3.59 We now turn to the effect of a backgate voltage. Empirical modeling suggests that its primary action is to control the width of the potential well, which becomes narrower with decreasing backgate voltage [28,30]. This should lead to an increased splitting between the energy levels of the states in the well [31,40,56].…”

Section: Based Onmentioning

confidence: 99%

“…This led to proposals to base the phase diagram on the sheet conductivity [24][25][26][27], which also does not provide a universal result. Almost all these experiments were done in a backgate geometry, whereas topgating has a different effect on carrier mobility [28][29][30] and on the band structure [31]. This difference is due to the opposite direction of the applied electric field, resulting in a disparate effect on the shape of the confining 2 potential well.…”

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Correlation between superconductivity, band filling, and electron confinement at the LaAlO3/SrTiO3 interface

Smink¹,

Stehno²,

Boer³

et al. 2018

Phys. Rev. B

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By combined top-and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO 3 -SrTiO 3 interface. We find that the top-and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate-dependence of T c to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum T c to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second d xy subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO 3 surface states, and establish gating as a means to control the relative energy of these states.

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“…Schrödinger-Poisson modeling has proven itself to provide qualitative insight into experimental results (30,132) as well as predict interesting new properties of SrTiO 3 surface states. For instance, Scopigno et al reported a possible thermodynamic instability as a result of the nonlinear permittivity, in certain regions of the gate-voltage/bandoccupation phase diagram (133).…”

Section: The Self-consistent Schrödinger-poisson Frameworkmentioning

confidence: 99%

Manifold field effects at a complex oxide interface

Smink¹

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Another driving force for the formation of distinctive electronic phases are interactions between electrons, or electronic correlations. Because the kinetic energy of d-orbital electrons is typically relatively small, they are particularly susceptible to the effects of these interactions (12). Prominent examples of correlated-electron effects are superconductivity, the Mott insulator state, and different types of magnetism. Field-effect control of such correlations may lead to the discovery of new physics, as well as to realizing new components for electronics (13). This applies in particular to the interfaces between complex oxides, where the mesoscopic physics of semiconductor interfaces can be combined with the electronic correlations found in oxides (14).

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Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

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Cited by 50 publications

References 55 publications

Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices

Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices

Correlation between superconductivity, band filling, and electron confinement at the LaAlO3/SrTiO3 interface

Manifold field effects at a complex oxide interface

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