Dual-gate AlGaN channel HEMTs: advancements in E-mode performance with N-shaped graded composite barriers
Wagma Hidayat,
Muhammad Usman,
Syeda Wageeha Shakir
et al.
Abstract:This work evaluates the performance of dual gate AlGaN channel HEMTs on SiC substrate. The study analyzes two HEMT structures that differ only in barrier design, one design consists of fixed composite barriers (FCB-HEMT) i.e. there is fixed Aluminum composition x = 0.48 in the first AlxGa1-xN barrier and x = 0.42 in the second AlxGa1-xN barrier while the other design comprises N-shaped graded composite barriers (NGCB-HEMT) i.e. the Aluminum content varies gradually from 0.4 to 0.48 in the first AlGaN barrier a… Show more
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