Dual-Band Ultra-Wideband Bandpass Filter with Eight-Resonant Modes and Quad-Transmission Zeros Employing Synchronous-Quasi-Resonance

Liang, Jun; Wang, C.; Kim, N. Y.

doi:10.13164/re.2017.0713

Cited by 6 publications

(6 citation statements)

References 13 publications

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“…Low-pass, high-pass, band-pass, and band-stop filters, are the most common filter types in the field of microwave filters. Among them, band-pass filters (BPFs) have been extensively studied and widely used in the RF front-end of receivers and transmitters considering they constitute RF/microwave integrated circuits and systems [ 1 , 2 ]. While early RF research extensively studied microstrip filters considering they were low cost, easy to process, lightweight, and possessed multi-component integration capabilities, they exhibited insufficient miniaturization and higher losses.…”

Section: Introductionmentioning

confidence: 99%

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

et al. 2022

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In this study, we propose a miniaturized bandpass filter (BPF) developed by combining an approximate circular (36-gon) winding inductor, a circinate capacitor, and five air-bridge structures fabricated on a gallium arsenide (GaAs) substrate using an integrated passive device (IPD) technology. We introduced air-bridge structures into the outer metal wire to improve the capacitance per unit volume while utilizing a miniaturized chip with dimensions 1538 μm × 800 μm (0.029 λ0 × 0.015 λ0) for the BPF. The pattern was designed and optimized by simulating different dimensional parameters, and the group delay and current density are presented. The equivalent circuit was modeled to analysis various parasitic effect. Additionally, we described the GaAs-based micro-nano scale fabrication process to elucidate the proposed IPD technology and the physical structure of the BPF. Measurements were conducted with a center frequency of 1.53 GHz (insertion loss of 0.53 dB) and a 3-dB fractional bandwidth (FBW) of 70.59%. The transmission zero was located at 4.16 GHz with restraint of 35.86 dB. Owing to the benefits from its miniaturized chip size and high performance, the proposed GaAs-based IPD BPF was verified as an excellent device for various S-band applications, such as satellite communication, keyless vehicle locks, wireless headphones, and radar.

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Section: Introductionmentioning

confidence: 99%

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

et al. 2022

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“…In the second decade following the invention of the integrated passive device (IPD), wireless communication systems emerged as the earliest large commercial market. Microwave bandpass filters (BPFs) have become increasingly widely utilized in the radio frequency front ends of both receivers and transmitters [1], [2]. The rapid development of modern wireless communication systems coupled with its increasing technical demands has created considerable demand for BPFs with even more stringent requirements: smaller size, better performance, lower cost, etc.…”

Section: Introductionmentioning

confidence: 99%

QFN-Packaged Bandpass Filter With Intertwined Circular Spiral Inductor and Integrated Center-Located Capacitors Using Integrated Passive Device Technology

et al. 2019

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This paper describes the implementation of a miniaturized quad flat no-lead (QFN)-packaged bandpass filter (BPF) with a combination of an intertwined circular spiral inductor and two types of integrated center-located capacitors using gallium-arsenide-based integrated passive device (IPD) fabrication technology. Air-bridge structures were introduced into the outer circular spiral inductor to save space and to provide the filter with a compact chip area of 1192.5 × 1012.7 µm 2 . An equivalent circuit was modeled, the current density and variable dimensional parameters were simulated, and the fabrication process was introduced to achieve a better understanding of the IPD BPF. The proposed device was packaged using the QFN-packaging technology and was measured to possess a single passband with a central frequency of 1.91 GHz (return loss: 28.8 dB) and a fractional bandwidth of 72.69% (insertion loss: 0.62 dB). One transmission zero was obtained on the right side of the passband at 4.78 GHz with an amplitude of 35.95 dB. The fabricated BPF can be used in various L-band applications, such as mobile service, satellite navigation, telecommunications, and aircraft surveillance, due to its miniaturized chip size and high-performance characteristics.INDEX TERMS Air-bridge structure, bandpass filter, capacitor, gallium arsenide, inductor, integrated passive device, QFN package.

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“…However, emerging applications continue to challenge BPF efficacy with increasingly rigorous demands for lower cost, smaller size, higher performance, etc. [ 1 , 2 , 3 ].…”

Section: Introductionmentioning

confidence: 99%

A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

et al. 2018

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This paper reports on the use of gallium arsenide-based integrated passive device technology for the implementation of a miniaturized bandpass filter that incorporates an intertwined circle-shaped spiral inductor and an integrated center-located capacitor. Air-bridge structures were introduced to the outer inductor and inner capacitor for the purpose of space-saving, thereby yielding a filter with an overall chip area of 1178 μm × 970 μm. Thus, not only is the chip area minimized, but the magnitude of return loss is also improved as a result of selective variation of bridge capacitance. The proposed device possesses a single passband with a central frequency of 1.71 GHz (return loss: 32.1 dB), and a wide fractional bandwidth (FBW) of 66.63% (insertion loss: 0.50 dB). One transmission zero with an amplitude of 43.42 dB was obtained on the right side of the passband at 4.48 GHz. Owing to its miniaturized chip size, wide FBW, good out-band suppression, and ability to yield high-quality signals, the fabricated bandpass filter can be implemented in various L-band applications such as mobile services, satellite navigation, telecommunications, and aircraft surveillance.

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Dual-Band Ultra-Wideband Bandpass Filter with Eight-Resonant Modes and Quad-Transmission Zeros Employing Synchronous-Quasi-Resonance

Abstract: Abstract. This paper presented a dual-band ultra-wideband bandpass filter, which employs three sets of T-shape stubloaded resonators (TSSLRs

Cited by 6 publications

References 13 publications

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

Design and Micro-Nano Fabrication of a GaAs-Based On-Chip Miniaturized Bandpass Filter with Intertwined Inductors and Circinate Capacitor Using Integrated Passive Device Technology

QFN-Packaged Bandpass Filter With Intertwined Circular Spiral Inductor and Integrated Center-Located Capacitors Using Integrated Passive Device Technology

A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

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