“…However, the most common thermistor materials like vanadium oxide (VO x ) [ 60 , 61 , 62 ] and silicon derivatives (a-Si, a-SiGe, a-Ge x Si 1−x O y , etc.,) [ 63 , 64 , 65 ], which have appropriate electrical properties, are not compatible with the CMOS process. For the CMOS-compatible microbolometer IR detector, one choice is the p-n junction diode which has acceptable properties and compatibility with CMOS process; therefore the silicon-on-insulator (SOI) diode IRFPAs have attracted continuous attention since first reported by Ishikawa et al in 1999 [ 13 ], and have been widely adopted in low-cost commercial IR detectors.…”