Dry Plasma Processing of Mercury Cadmium Telluride and Related II–VIs

Stoltz, A. J.

doi:10.1002/9780470669464.ch17

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2017

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“…Physical etching refers to removal of materials due to bombardments of energetic plasma ions on the substrate surface [8]. Stoltz [10] reported that increased microwave plasma power produces higher plasma ion density and ion current. This investigation was performed to determine the change in surface topography on epoxy composite by varying the plasma power at fixed oxygen flow rate and treatment time.…”

Section: Introductionmentioning

confidence: 99%

Effect of Microwave Plasma Power on Topographical Change in Epoxy Composites

Choong

Cheong

2017

SSP

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The effect of the microwave (2.45 GHz) plasma power on the surface topography was evaluated on a commercially available epoxy composite. The plasma treatment was performed by varying the microwave plasma power from 200 W to 500 W at a constant oxygen flow rate at 20 sccm for one min treatment. Based on the Atomic Force Microscopy analysis, the surface roughness root mean square was changed from -2% to 21% by increasing the plasma power from 200 W to 500 W. In oxygen plasma, the interaction of plasma ions with the substrate surface leads to oxidation and etching of surface materials. More plasma ion density and ion current can be produced by increasing the plasma power. As a result, more interaction between plasma ion and substrate surface using high plasma power. The surface roughness can be considerably increased by plasma treatment using power above 400 W.

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Section: Introductionmentioning

confidence: 99%