Dry etching of submicron gratings for InP laser structures-comparison of HI/H₂, CH₄/H₂and C₂H₆/H₂plasma chemistries

Abstract

Three different discharge chemistries for dry etching of gratings in InP laser structures have been investigated. Each type of plasma (HI/HZ, CH4/H2, GHB/H2) yields controllable Btch rates that are constant with etching time. Lower DC self-biases can be used with HI/Hz because of the greater volatility of the group 111 etch products. The &H& mixture produces excessive polymer deposiiion un iiie priuroresisi rriasK ar pru~ess piessures 3 iir riiiori. The rectangular shape d the gratings is preserved during wergrowth by organo-metallic vapour phase epitaxy.

Formation of dry etched gratings in GaN and InGaN

“…These samples were coated with 450A thick, imaging photoresist which was patterned by holographic exposure using the wavefront division method.12. 13 Dry etching was performed in a Plasma-Therm SLR 770 system at substrate temperature between 100-300~ The microwave power of the ECR source was held constant at 500 W, while the radio frequency (r0 chuck power (100 W) produced adc self-bias at the sample position of-145 V. The gas chemistry employed was BClJN 2 (10/5 standard cubic centimeters per rain gas flow rates), which we have found effective in preserving the surface stoichiometry of dry etched nitrides. ~4 The etch rates were established by stylus profilometry on separate sections patterned with SiN x masks, while the samples etched with the holographic resist masks were characterized by atomic force microscopy (AFM) performed in the tapping mode, and scanning electron microscopy (SEM).…”

Cathodoluminescence study of inductively coupled plasma (ICP) etched InP waveguide structures: Influence of the ridge dimension and dielectric capping

“…The studies carried out for the optimisation of the etching procedures have been mainly focused on the morphological analysis, e.g. the verticality of the engraved walls, and the residual roughness [3,4]. These studies are currently carried out by morphology inspection techniques, as scanning electron microscopy (SEM) and atomic force microscopy (AFM).…”

Dry etching of InP using a CH3Cl/Ar/H2 gas mixture with electron-cyclotron-resonance excitation

“…[9][10][11] One of the problems in etch with hydrocarbon gases is polymer deposition on the etching mask. [9][10][11] One of the problems in etch with hydrocarbon gases is polymer deposition on the etching mask.…”