Droplet-on-demand Inkjet-filled Through-silicon Vias (TSVs) as a Pathway to Cost-efficient Chip Stacking

Sadie, Jacob; Quack, Niels; Wu, Ming C.; Subramanian, Vivek

doi:10.4071/isom-2013-thp36

Cited by 5 publications

(1 citation statement)

References 5 publications

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“…Previously, inkjet printing was used to metallize or fill the vias partially [7][8][9] or completely [10,11]. The drop-size defines the minimum via diameter that can be filled by inkjet.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical characterization of partially metallized vias fabricated by inkjet

Khorramdel

Mäntysalo

2016

J. Micromech. Microeng.

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Through silicon vias (TSVs), acting as vertical interconnections, play an important role in micro-electro-mechanical systems (MEMS) 3D wafer level packaging. Today, taking advantage of nanoparticle inks, inkjet technologies as local filling methods could be used to plate the inside the vias with a conductive material, rather than using a current method, such as chemical vapor deposition or electrolytic growth. This could decrease the processing time, cost and waste material produced. In this work, we have fabricated and demonstrated electrical characterization of TSVs with a top diameter of 85 μm, and partially metallized on their inside walls using silver nanoparticle ink and drop-on-demand inkjet printing. Electrical measurement showed that the resistance of a single via with a void free coverage from top to bottom could be less than 4 Ω, which is still acceptable for MEMS applications.

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“…Previously, inkjet printing was used to metallize or fill the vias partially [7][8][9] or completely [10,11]. The drop-size defines the minimum via diameter that can be filled by inkjet.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical characterization of partially metallized vias fabricated by inkjet

Khorramdel

Mäntysalo

2016

J. Micromech. Microeng.

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Inkjet printing technology for increasing the I/O density of 3D TSV interposers

et al. 2017

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Interposers with through-silicon vias (TSVs) play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems. In the current practice of fabricating interposers, solder balls are placed next to the vias; however, this approach requires a large foot print for the input/output (I/O) connections. Therefore, in this study, we investigate the possibility of placing the solder balls directly on top of the vias, thereby enabling a smaller pitch between the solder balls and an increased density of the I/O connections. To reach this goal, inkjet printing (that is, piezo and super inkjet) was used to successfully fill and planarize hollow metal TSVs with a dielectric polymer. The under bump metallization (UBM) pads were also successfully printed with inkjet technology on top of the polymer-filled vias, using either Ag or Au inks. The reliability of the TSV interposers was investigated by a temperature cycling stress test (−40°C to +125°C). The stress test showed no impact on DC resistance of the TSVs; however, shrinkage and delamination of the polymer was observed, along with some micro-cracks in the UBM pads. For proof of concept, SnAgCu-based solder balls were jetted on the UBM pads.

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