Drift suppression of solution-gated graphene field-effect transistors through electrolyte submersion
Shota Ushiba,
Yuka Tokuda,
Tomomi Nakano
et al.
Abstract:In solution-gated graphene field-effect transistors (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO2. Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-GFETs. In this study, we investigated the effect of submerging GFETs in electrolyte solutions on CNP values. The results revealed that the CNP decreased considerably from approximately 180 mV to nearly zero with the increase in the immersion period.… Show more
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