Drift leakage current in AlGaInP quantum-well lasers

Bour, D. P.; Treat, D.W.; Thornton, Russell; Geels, R.S.; Welch, David

doi:10.1109/3.236147

Cited by 112 publications

(57 citation statements)

References 20 publications

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“…Also interestingly, the spectrum is nearly half weighted to the red (41% of the power). 10 The reason is a combination of the 3,000 K white point lying so close to the green-yellow- 10 This, combined with the fact (as seen from Table 1) that the luminous efficacy of radiation of the red (312 lm/W) is inred edge of the chromaticity diagram, and the importance of red to color rendering.…”

Section: Luminous Efficacy and Color Renderingmentioning

confidence: 99%

“…The cause is the fairly light effective mass of electrons in combination with increasingly smaller conduction band offsets, which range from ∼ 240 meV (the offset between the conduction bands of InGaP and AlInP) to ∼ 90 meV for 580 nm (the offset between the conduction bands of (Al 0.3 Ga 0.7 ) 0.52 In 0.48 P and AlInP). This can lead to a high level of diffusive and/or drift-based current leakage, depending on the operating current density of the device [10].…”

Section: Alingap Semiconductors (R)mentioning

confidence: 99%

See 1 more Smart Citation

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

374

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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Section: Luminous Efficacy and Color Renderingmentioning

confidence: 99%

Section: Alingap Semiconductors (R)mentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

374

268

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“…2) from the G valley of the Ga 0.43 In 0.57 P quantum-well material to the X-valley of the (Al 0.67 Ga 0.33 ) 0.52 In 0.48 P barriers [12] which are very close on the energy scale. This phenomenon is especially important in the case of the 665-nm VCSELs [13] and even more considerable in the 630-nm ones [14]. In our model, the above effect has been additionally taken into account by introduction of the temperature-dependent efficiency inj of electron injection into the active region…”

Section: The Modelmentioning

confidence: 99%

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Piskorski

Sarzała

Nakwaski

2008

Opto-Electronics Review

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The possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga0.43In0.57P quantum-well material to the X-valley of the (Al0.67Ga0.33)0.52In0.48P barriers and the band-to-band absorption within the Ga0.52In0.48P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T0 equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-μm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.

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“…The limitations of the efficiency of redemitting InAlGaP LEDs were attributed to the intrinsic constraint in the crossover from a direct bandgap to an indirect bandgap for InAlGaP materials, 268 which in turn limits the maximum band-offset achievable in InAlGaP-InGaP heterostructures. The low band-offset achievable in InAlGaP-InGaP increases thermally driven carrier leakage processes, 269,270 which has an impact on both the internal quantum efficiency and the current injection efficiency, in particular at high device operating temperatures. 271 Several approaches have been pursued to advance the InAlGaP technologies, specifically the development of active regions with increased spontaneous emission rate for high radiative efficiency and improved heterostructures for achieving higher current injection efficiency.…”

Section: Progress In Iii-v and Iii-nitride Semiconductor Lighting Tecmentioning

confidence: 99%

The role of photonics in energy

et al. 2015

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Abstract. In celebration of the 2015 International Year of Light, we highlight major breakthroughs in photonics for energy conversion and conservation. The section on energy conversion discusses the role of light in solar light harvesting for electrical and thermal power generation; chemical energy conversion and fuel generation; as well as photonic sensors for energy applications. The section on energy conservation focuses on solid-state lighting, flat-panel displays, and optical communications and interconnects.

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Drift leakage current in AlGaInP quantum-well lasers

Cited by 112 publications

References 20 publications

Research challenges to ultra‐efficient inorganic solid‐state lighting

Research challenges to ultra‐efficient inorganic solid‐state lighting

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

The role of photonics in energy

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