Drift-diffusion model of hole migration in diamond crystals via states of valence and acceptor bands

Poklonski, N. A.; Вырко, С. А.; Ковалев, А. И.; Dzeraviaha, A. N.

doi:10.1088/2399-6528/aa8e26

Cited by 15 publications

(16 citation statements)

References 64 publications

(124 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…1, b). Note that in a lightly doped p-type semiconductor, the contribution of the exchange energy of v-band holes to E (v) m can be neglected (see, for example, [18]).…”

Section: General Relationshipsmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

View full text Add to dashboard Cite

A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature Tj using the standard approach within the framework of the two-band model. The shift of the top of the v-band (the bottom of the c-band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature Tj are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall coefficient of moderately compensated p-Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n-Ge, as well as n- and p-Si crystals on the insulator side of the Mott insulator--metal concentration phase transition. Keywords: bulk crystals of germanium and silicon, hydrogen-like acceptors and donors, holes and electrons, band and hopping motion of charge carriers.

show abstract

“…1, b). Note that in a lightly doped p-type semiconductor, the contribution of the exchange energy of v-band holes to E (v) m can be neglected (see, for example, [18]).…”

Section: General Relationshipsmentioning

confidence: 99%

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

et al. 2022

View full text Add to dashboard Cite

show abstract

“…The relationship between the hopping diffusion coefficients D −1,0 and D 0,+1 and the drift hopping mo-bilities M −1,0 and M 0,+1 of electrons hopping via point t-defects of the crystal matrix is established by the Nernst-Einstein-Smoluchowski relation (see, e.g., [3,25]):…”

Section: Model Of Capacitor With Working Substance "Insulator-partially Disordered Semiconductor-insulator"mentioning

confidence: 99%

“…( 16)) can be estimated by averaging over all probable hopping lengths r (cf. [22][23][24][25][26][27]):…”

Section: Model Of Capacitor With Working Substance "Insulator-partially Disordered Semiconductor-insulator"mentioning

confidence: 99%

Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”

Poklonski

Anikeev

Вырко

2021

Prib. metody izmer.

View full text Add to dashboard Cite

The study of the electrophysical characteristics of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant varactors. The capacitance-voltage characteristics of a disordered semiconductor can be used to determine the concentration of point defects in its crystal matrix. The purpose of this work is to calculate the low-frequency admittance of a capacitor with the working substance “insulator–crystalline semiconductor with point t-defects in charge states (−1), (0) and (+1)–insulator”. A layer of a partially disordered semiconductor with a thickness of 150 μm is separated from the metal plates of the capacitor by insulating layers of polyimide with a thickness of 3 μm. The partially disordered semiconductor of the working substance of the capacitor can be, for example, a highly defective crystalline silicon containing point t-defects randomly (Poissonian) distributed over the crystal in charge states (−1), (0), and (+1), between which single electrons migrate in a hopping manner. It is assumed that the electron hops occur only from t-defects in the charge state (−1) to t-defects in the charge state (0) and from t-defects in the charge state (0) to t-defects in the charge state (+1).In this work, for the first time, the averaging of the hopping diffusion coefficients over all probable electron hopping lengths via t-defects in the charge states (−1), (0) and (0), (+1) in the covalent crystal matrix was carried out. For such an element, the low-frequency admittance and phase shift angle between current and voltage as the functions on the voltage applied to the capacitor electrodes were calculated at the t-defect concentration of 3∙1019 cm−3 for temperatures of 250, 300, and 350 K and at temperature of 300 K for the t-defect concentrations of 1∙1019, 3∙1019, and 1∙1020 cm−3.

show abstract

“…Ion hydration is the greatest interactions, which is generally used in the chemistry of solutions. The diffusion coefficient (D) of ions in solution can be found by Einstein-Smoluchowski, [18].…”

Section: Fig 2: A-the Solvation Shells Of M 3+ Ion (Eg M 3+ Of Gromentioning

confidence: 99%

Hydration Thermodynamics and Hydrodynamic (Stokes) Radius of the Lanthanide Ions

Kadhim

Gamaj

2020

IJP

View full text Add to dashboard Cite

Many biochemical and physiological properties depend on the size of ions and the thermodynamic quantities of ion hydration. The diffusion coefficient (D) of lanthanide (III) ions (Ln+3) in solution assumed (1.558-1.618 ×10−9 m2 s−1) by Einstein–Smoluchowski relation. The association constant (KA) of Ln+3 ions was calculated (210.3-215.3 dm3 mole-1) using the Shedlovsky method, and the hydrodynamic radius calculated (1.515-1.569 ×10−10 m) by the Stokes-Einstein equation. The thermodynamic parameters (ΔGo, ΔSo) also calculated by used suitable relations, while ΔHo, values are obtained from the literature. ΔGo, for ion hydration, has negative values in the range (13.25-13.30 KJ/mole), and a negative ΔSo, results have been shown in the limit (11.016-12.506 KJ/ K. mole).

show abstract

Drift-diffusion model of hole migration in diamond crystals via states of valence and acceptor bands

Cited by 15 publications

References 64 publications

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors

Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”

Hydration Thermodynamics and Hydrodynamic (Stokes) Radius of the Lanthanide Ions

Contact Info

Product

Resources

About