Dressed Photons Induced Resistance Oscillation and Zero Resistance in Arrayed Simple Harmonic Oscillators with No Impurity

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In a quantum system of arrayed two-level atoms interacting with light, the interacted (dressed) photon is propagating in a periodic medium and its eigenstate ought to be of Bloch type with lattice symmetry. As the energy of photon is around the spacing between the two atomic energy levels, the photon will be absorbed and is not in the propagating mode but the attenuated mode. Therefore an energy gap exists in the dispersion relation of the photonic Bloch wave of dressed photon in addition to the nonlinear behaviors due to atom-light interactions. There follows several interesting results which are distinct from those obtained through a linear dispersion relation of free photon. For example, slow light can exist, the density of state of dressed photon is non-Lorentzian and is very large around the energy gap; the Rabi oscillations become monotonically decreasing in some cases; and besides the superradiance occurs at long wavelengths, the spontaneous emission is also very strong near the energy gap because of the high density of state.

“…2 . In fact, the eigenstate |Ψ k 〉 corresponding to the eigenenergy (excitation spectrum) ω k is a photonic Bloch state 33 . In Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transport of Photonic Bloch Wave in Arrayed Two-Level Atoms

Chang

Lin

Chen

2018

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“…Such high quality material has demonstrated new 2D physical phenomena such as the photo-excited zero-resistance states 1 , 2 and 1/4− cycle shifted magnetoresistance oscillations 3 induced by low energy photons in the low magnetic field, high filling factor limit. Associated results have produced new interest in the experimental 1 – 39 and theoretical 40 – 62 study of photo-excited transport in low dimensional systems. The dark properties of the GaAs/AlGaAs 2D material system in the low magnetic field limit have also attracted recent experimental attention as the results have helped to provide new insights into both an observable giant magnetoresistance in the 2DES, and a small, narrow negative magnetoresistance near null magnetic field 63 – 77 .…”

Section: Introductionmentioning

confidence: 99%

Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES

Samaraweera

Liu

Gunawardana

et al. 2018

A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.

“…Advances in molecular beam epitaxy have facilitated the growth of high mobility GaAs/AlGaAs heterostructures with ever improving material quality which show interesting novel physical phenomena including the radiation-induced zero resistance states and associated magneto-resistance oscillations at low magnetic fields and liquid helium temperatures . By now, a number of experimental and theoretical [33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50] studies have been carried out on the photo-excited transport in low dimensional systems. In addition to the photo-excited effects, the dark magneto-transport properties including positive magnetoresistance 51,52 , giant negative magnetoresistance [53][54][55][56][57][58][59][60][61] , and narrow negative magnetoresistance effect near zero field have also attracted recent experimental attention.…”

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confidence: 99%

Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

Samaraweera

Gunawardana

Nanayakkara

et al. 2020

The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈10 7 cm 2 /Vs) is experimentally examined as a function of incident microwave power at a fixed bath temperature. The experimental results indicate that the narrow negative magnetoresistance effect exhibits substantially increased broadening with increasing microwave intensity. These magnetoresistance data were subjected to lineshape fits to extract possible variation of characteristic lengths with microwave intensity; the results suggest that characteristic lengths decrease by up to 50% upon increasing microwave power up to about 8 mW. We also examine the change in effective electron temperature, T e , due to the photo-excitation in the absence of a magnetic field. Combining these results suggests a correlation between electron heating and the observed change in the fit extracted characteristic lengths.