Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

Chen, Xiaorong; Feng, Jiangshan; Bae, Dong Ho

doi:10.1016/j.apsusc.2014.10.133

Cited by 17 publications

(9 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The peak fitting was performed using Shirley background subtraction and Gaussian-Lorentzian function. The binding energy of 21.94 eV and 23.77 eV, corresponding to the Ta 4f 7/2 and Ta 4f 5/2 with spin-orbit splitting, is the typical Ta 0 peak 13 14 . There are no any oxides of tantalum, proving that only a pure metal tantalum exists at the interface.…”

Section: Resultsmentioning

confidence: 99%

Point contact resistive switching memory based on self-formed interface of Al/ITO

Qiu

Wei

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

show abstract

Section: Resultsmentioning

confidence: 99%

Point contact resistive switching memory based on self-formed interface of Al/ITO

Qiu

Wei

et al. 2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Resistive random access memory (RRAM), as the emerging non-volatile memory, has the potential to replace traditional NAND flash [ 1 , 2 , 3 ]. RRAM has some unique advantages: its simple structure, good scalability, low operating voltages, low energy consumption, fast reading and writing speed, high memory density and excellent compatibility [ 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Zhang

Wang

et al. 2021

Materials

View full text Add to dashboard Cite

In order to improve the electrical performance of resistive random access memory (RRAM), sulfur (S)-doping technology for HfOx-based RRAM is systematically investigated in this paper. HfOx films with different S-doping contents are achieved by atmospheric pressure chemical vapor deposition (APCVD) under a series of preparation temperatures. The effect of S on crystallinity, surface topography, element composition of HfOx thin films and resistive switching (RS) performance of HfOx-based devices are discussed. Compared with an undoped device, the VSET/VRESET of the S-doped device with optimal S content (~1.66 At.%) is reduced, and the compliance current (Icc) is limited from 1 mA to 100 μA. Moreover, it also has high uniformity of resistance and voltage, stable endurance, good retention characteristics, fast response speed (SET 6.25 μs/RESET 7.50 μs) and low energy consumption (SET 9.08 nJ/RESET 6.72 nJ). Based on X-ray photoelectron spectroscopy (XPS) data and fitting of the high/low resistance state (HRS/LRS) conduction behavior, a switching mechanism is considered to explain the formation and rupture of conductive filaments (CFs) composed of oxygen vacancies in undoped and S-doped HfOx-based devices. Doping by sulfur is proposed to introduce the appropriate concentration oxygen vacancies into HfOx film and suppress the random formation of CFs in HfOx-based device, and thus improve the performance of the TiN/HfOx/ITO device.

show abstract

“…For instance, Umesh Chand et al suppressed the endurance degradation of HfO 2 -based RS memory by utilizing OPT which could increase extra available oxygen ions [28]. Xiaorong Chen et al achieved improved RRAM stability due to the large quantity Ta 2 O 5 near the top electrode after OPT, which played an important role in resistive switching of the devices [29]. Nevertheless, the lack of experimental evidence observed directly from the microscopic level of materials and appropriate understandings on how OPT modulates switching properties hinders its practical application.…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices

et al. 2019

View full text Add to dashboard Cite

Oxygen ions’ migration is the fundamental resistive switching (RS) mechanism of the binary metal oxides-based memristive devices, and recent studies have found that the RS performance can be enhanced through appropriate oxygen plasma treatment (OPT). However, the lack of experimental evidence observed directly from the microscopic level of materials and applicable understanding of how OPT improves the RS properties will cause significant difficulties in its further application. In this work, we apply scanning probe microscope (SPM)-based techniques to study the OPT-enhanced RS performance in prototypical HfOx based memristive devices through in situ morphology and electrical measurements. It is first found that the structural deformations in HfOx nanofilm induced by migration of oxygen ions and interfacial electrochemical reactions can be recovered by OPT effectively. More importantly, such structural deformations no longer occur after OPT due to the strengthening in lattice structure, which directly illustrates the enhanced quantity of HfOx nanofilm and the nature of enhanced RS properties after OPT. Finally, the underlying mechanisms of OPT-enhanced RS performance are analyzed by the results of X-ray photoelectron spectroscopic (XPS) surface analysis. In the OPT-enhanced HfOx nanofilm, oxygen vacancies in crystalline regions can be remarkably reduced by active oxygen ions’ implantation. The oxygen ions transport will depend considerably on the grain boundaries and OPT-enhanced lattice structure will further guarantee the stability of conductive filaments, both of which ensure the uniformity and repeatability in RS processes. This study could provide a scientific basis for improving RS performance of oxides-based memristive devices by utilizing OPT.

show abstract

Drastic reduction of RRAM reset current via plasma oxidization of TaOx film

Cited by 17 publications

References 27 publications

Point contact resistive switching memory based on self-formed interface of Al/ITO

Point contact resistive switching memory based on self-formed interface of Al/ITO

Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices

Contact Info

Product

Resources

About