DRAM Cell with High Signal Charge and Small Storage Capacitance Using the Gain Concept

Abstract

A new DRAM cell has been developed that features high signal charge and low aspect ratio of the storage capacitor. It can be fabricated based on a standard CMOS process, so that the cell can be integrated into existing technologies. This has been verified by processing of demonstrator cells that provide signal charges greater by factors than as of conventional DRAM cells.