Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

doi:10.3390/ma11040559

Cited by 14 publications

(14 citation statements)

References 26 publications

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“…Compared to a previous publication [25], the electrical properties of a-IGZO TFTs with various T IGZO exhibit the identical tendency. It is suggested that the devices exhibit great repeatability for the same kind of material under the same fabrication process.…”

Section: Resultsmentioning

confidence: 60%

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

Wang¹,

Furuta²

2018

Beilstein J. Nanotechnol.

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The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T IGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the T IGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the T IGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping V GS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the T IGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.

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Section: Resultsmentioning

confidence: 60%

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

Wang¹,

Furuta²

2018

Beilstein J. Nanotechnol.

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“…The transfer curves of TFT devices with different T ITZO were evaluated at a drain voltage (V DS ) of 0.1 and 20.1 V, as shown in Figure 2. The linear (µ lin ) and saturated (µ sat ) mobilities were estimated on the basis of previous literature [21]. The turn-on voltage (V ON ) was extracted from the gate voltage (V GS ) at a drain current (I DS ) of 1 nA.…”

Section: Resultsmentioning

confidence: 99%

“…When the stress time exceeds 3000 s, hole trapping seems to become a major reason for the slightly negative V ON shift. It can be explained by the impact ionization phenomenon [21], which induces the generation of an electron-hole pair. Consequently, the excited charges are trapped at the front-and back-channel interfaces.…”

Section: Discussionmentioning

confidence: 99%

“…More importantly, to understand the carrier transport mechanism in the devices, both the channel layer thickness and drain current stress (DCS) should be fully considered. Figure 1 displays the device architecture and fabrication procedure of ITZO-based TFT, which refers to our previous publication [21]. The chromium gate electrode was prepared on the glass substrate, and the SiO x gate insulator with a thickness of 150 nm was formed by plasma-enhanced chemical vapor deposition (PECVD).…”

Section: Introductionmentioning

confidence: 99%

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Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

et al. 2020

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Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devices. Nevertheless, further breakthroughs of metal oxide TFTs are mainly obstructed by their long-term variability, the reason for which is not yet fully understood. Herein, TFTs based on InSnZnO (ITZO) with various thicknesses (TITZO) were prepared and their long-term stabilities under test temperatures and drain current stress were investigated. The results indicate that ITZO TFTs exhibit outstanding electrical properties regardless of the TITZO, including a high saturated mobility of over 35 cm2V−1s−1 and sharp subthreshold swing. Note that the transfer and output characteristic curves of the device with a thick TITZO of 100 nm express an abnormal current surge when high gate and drain voltages are exerted, which is attributed to the floating body effect, caused when the imposed electric field induces impact ionization near the drain side. More interestingly, these drain current stress results further suggest that the abnormal shift behavior of the electrical properties of the ITZO TFTs with a TITZO of greater than 75 nm is observed to deteriorate gradually with increasing temperature and drain current bias. This study addresses that such a degradation effect should be restrained for the operation of high-mobility devices.

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“…In existing reports, under conditions that enable increasing of the driving current, such as an increase in the environment temperature and an examination of light during the stress evaluation, it is common to see that a hump is manifested. In addition, in recent research carried out on the abnormal drive of a transistor by the drain current stress 20,21 , a hump phenomenon has been reported. Although there have been reports on the hump effect under the subthreshold operation as an edge effect back-channel conduction or parasitic TFTs, the hump effect has not been fully studied in oxide semiconductors under various driving stress environments.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

Lee

Abe²,

Noh

et al. 2019

Sci Rep

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The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional “ needle ”, a shallow (~0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge.

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Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Cited by 14 publications

References 26 publications

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor

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