Drain Current Model of Graphene Channel G 4 -FET and Gate-All-Around MOSFET

Abstract

Potential distribution and Wave function distribution are obtained by solving 2-D Poisson-Schrödinger equation using COMSOL with MATLAB. Conduction band profile and carrier density are investigated. Drain current of Graphene Channel Four Gate Transistor (G 4 -FET) and Gate-All-Around (GAA) MOSFET are calculated and compared. CONCLUSIONThe potential distribution and Wave function distribution for n-Graphene channel G 4 -FET and GAA MOSFET have been obtained by solving 2-D Poisson-Schrödinger equation using COMSOL with MATLAB. The maximum potential of G 4 -FET and GAA MOSFET has been compared. Conduction band profile and carrier density has been investigated. Drain current of n-Graphene channel G 4 -FET and GAA MOSFET has been calculated and compared with n-Silicon channel G 4 -FET. In the future, transconductance, threshold voltage, Sub-threshold Swing (SS), Drain Induced Barrier Lowering (DIBL), on-off current ratio will be calculated for those structures.