Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs

Shiga, T.; Hattori, Reiji; Kunii, T.; Oku, Tatsuya; Sato, Kazuhiko; Ishihara, O.

doi:10.1109/gaas.1995.528967

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

DOI: 10.1109/gaas.1995.528967

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Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs

T. Shiga

Reiji Hattori

T. Kunii

et al.

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Drain current drift by holes trapped in Schottky contact in WSi gate GaAs MESFETs

Cited by 1 publication

References 4 publications

Trap-related gain/phase jump of HFET power amplifiers

Trap-related gain/phase jump of HFET power amplifiers

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