Down‐Conversion of High‐Frequency Acoustic Phonons

Galkina, T. I.; Blinov, A. Yu.; Bonch-Osmolovskiǐ, M. M.; Koblinger, O.; Laßmann, Kurt; Eisenmenger, Wolfgang

doi:10.1002/pssb.2221440254

Cited by 6 publications

(1 citation statement)

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“…The spectra of Figure 3a corresponding to phonon lines are fitted by 1/ f noise with two Lorentzian noise phenomena at 12 Hz and 2800 Hz respectively, both irrespective from the gate voltage. As they are observed only in correspondence of visible phonon emission lines, we attribute them to the decay of high frequency phonons to low frequency acoustic phonons during the cooling process of the crystal [26][27][28][29] . The Fig.…”

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confidence: 99%

Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis

Bigoni

Tagliaferri

Tamascelli

et al. 2020

Appl. Phys. Express

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We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian 1/ f 2 noise at low frequency.

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confidence: 99%