Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

Geng, He; Qin, Feifei; Xu, Chunxiang; Wang, Chinhua; Xu, Yu; Cao, Bing; Xu, Ke

doi:10.1016/j.jmst.2020.02.084

Cited by 15 publications

(7 citation statements)

References 26 publications

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“…Recently, more and more attention has been focused on integrating two-dimensional materials (2DMs) with conventional semiconductors for device applications, such as graphene with II/VI and III/V groups, − h-BN, transition metal dihalides with III/V groups, etc . − Taking advantage of the special properties of 2DMs, the properties of three-dimensional materials (3DMs) devices can be extended. Among diverse 2DMs, graphene offers promising properties, such as high electrical conductivity, excellent mechanical strength, optical transparency, and large-area production. − It has received widespread attention, especially a heteroepitaxy technology called quasi-van der Waals epitaxy (QvdWE).…”

Section: Introductionmentioning

confidence: 99%

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Wang

et al. 2023

ACS Nano

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Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epilayer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.

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Section: Introductionmentioning

confidence: 99%

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Wang

et al. 2023

ACS Nano

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“…GaN has been developed into one of the most important semiconductor materials after Si with excellent photoelectric properties. Due to the lack of affordable natural substrates, GaN is usually grown by heteroepitaxy on sapphire, , SiC, , or Si, , which inevitably brings additional defects and stress. , In recent years, van der Waals epitaxy (vdWE) of GaN on two-dimensional (2D) materials such as hexagonal boron nitride (h-BN) has attracted widespread attention. − The h-BN weakly bonded 2D intermediate layer is believed to minimize the lattice mismatch between the epitaxial layer and the heterogeneous substrate. , However, the flat surface of 2D materials lacks defects, atomic layer steps, and impurity atom type of nucleation sites, , which make it difficult to form a film. , Therefore, it is almost impossible for GaN to nucleate on 2D materials unless 2D materials are imperfect. The natural defects and wrinkles induced during 2D materials’ growth can, sometimes, serve as a nucleation site; a continuous film of GaN is, however, usually difficult to obtain due to the lack of sufficient nucleation sites.…”

Section: Introductionmentioning

confidence: 99%

“…14,15 However, the flat surface of 2D materials lacks defects, atomic layer steps, and impurity atom type of nucleation sites, 16,17 which make it difficult to form a film. 18,19 Therefore, it is almost impossible for GaN to nucleate on 2D materials unless 2D materials are imperfect. The natural defects and wrinkles induced during 2D materials' growth can, sometimes, serve as a nucleation site; a continuous film of GaN is, however, usually difficult to obtain due to the lack of sufficient nucleation sites.…”

Section: ■ Introductionmentioning

confidence: 99%

Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

et al. 2023

Crystal Growth & Design

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The excellent physical and chemical properties of two-dimensional (2D) materials provide the possibility to promote the further development of 3D III-nitride semiconductors. Growing GaN films on 2D materials like hexagonal boron nitride (h-BN) can reduce the defects and stress caused by lattice mismatch and thermal mismatch and improve the crystal quality of GaN. Here, the growth mechanism of exfoliable GaN films grown on processed wrinkled h-BN/sapphire substrates by van der Waals epitaxy is reported. The processed wrinkled h-BN is obtained from natural wrinkled h-BN through O 2 plasma treatment. The O 2 plasma creates new atomic steps in the wrinkles and also additional defects in the flat areas. Metal-organic chemical vapor deposition was used to grow GaN, and it was found that GaN preferentially nucleated along the processed wrinkles. The physical mechanism of preferential nucleation of GaN along h-BN wrinkles was investigated with first-principles calculations, which reveals that compared with flat areas, the wrinkles showed greater N atom adsorption energy (−5.55 eV). The complete growth process of GaN nucleation along the wrinkles, followed by lateral growth of islands and finally merging to form a flat single-crystal GaN film, was fully demonstrated. The obtained GaN film has a typical atomic-step terrace, a dislocation density of 7.23 × 10 8 cm −2 , and a low compressive stress of 0.095 GPa. Due to the weak van der Waals force between the h-BN layers, the obtained GaN film can be easily released. Our work provides a new strategy for the growth of high-quality exfoliable GaN films on 2D materials, laying the foundation for the preparation of transferable GaN flexible devices.

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“…GaN with a wide direct bandgap of 3.41 eV at room temperature is the technological material employed for UV laser diodes. With the advanced of growth techniques such as metal-organic chemical vapor deposition (MOCVD) and vapor phase epitaxy growth method, [25,26] high-quality GaN can be readily deposited so that GaN-based UV lasers have been realized using singlecrystal GaN film, [27,28] Fabry-Perot nanowire cavities, [29][30][31][32][33] whispering-gallery-mode cavities, [34][35][36][37][38] and vertical cavity surface emitting lasers (VCSEL). [39,40] For random scattering lasers, Fabry-Perot lasers, and whispering-gallery-mode lasers, out-ofplane directional emission lasing remains difficult to achieve.…”

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confidence: 99%

GaN Ultraviolet Laser based on Bound States in the Continuum (BIC)

Chen

Xing

et al. 2023

Advanced Optical Materials

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structures. The optical BIC states in a wave system have been widely discussed and utilized. The quasi-BIC effect was first reported in passive systems in the form of a 1D line-and-space periodic structure. [6] Subsequently, some passive devices utilizing BIC modes supported in metallic metasurfaces, [7,8] dielectric metasurfaces, [9][10][11] and photonic elements [12,13] are demonstrated. In an active device, a BIC mode can support narrow-linewidth lasing with a smaller device size down to a few dozen periods of the BIC structure, which makes it possible for the laser device to be integrated at high density onto a chip. [14] Due to these advantages of BIC in light confinement, BIC-supported lasers in the NIR range were realized. [14][15][16][17] The lasing emission is observed from a nanoarray structure having feature sizes smaller than 10 µm. Later, BIC-supported lasers were realized in the visible range. [18][19][20][21][22][23][24] A highspeed optical switch with vortex lasing emission is also realized via BICs in the visible range. However, a BIC-supported nanolaser emitting in the ultraviolet (UV) has not yet been reported.With wavelengths ranging from 200 to 400 nm, UV nanolasers hold important applications in high-resolution bioimaging, laser therapy, spectroscopy, lithography, and optical storage. GaN with a wide direct bandgap of 3.41 eV at room temperature is the technological material employed for UV laser diodes. With the advanced of growth techniques such as metal-organic chemical vapor deposition (MOCVD) and vapor phase epitaxy growth method, [25,26] high-quality GaN can be readily deposited so that GaN-based UV lasers have been realized using singlecrystal GaN film, [27,28] Fabry-Perot nanowire cavities, [29][30][31][32][33] whispering-gallery-mode cavities, [34][35][36][37][38] and vertical cavity surface emitting lasers (VCSEL). [39,40] For random scattering lasers, Fabry-Perot lasers, and whispering-gallery-mode lasers, out-ofplane directional emission lasing remains difficult to achieve. In contrast, VCSELs are designed for out-of-plane emission but require a relatively large cavity to support lasing action. BICbased lasers have the potential to realize highly directional emissions with small device sizes.Here, we demonstrate a BIC-based UV laser with directional emission and tunable emission wavelength that is fabricated on a standard GaN thin film without any etching step. A 1D periodic resist structure supporting the BIC mode was fabricated directly on the GaN thin film by a single-step electron-beam (e-beam) Optical bound states in the continuum (BICs), realizing substantial suppression of out-of-plane radiative losses, have been utilized to realize strong light confinement and optical modes with high quality-factor (Q). Lasing actions with narrow linewidths based on optical BIC modes have been demonstrated in the near-infrared and the visible ranges, but BIC-based lasers in the ultraviolet (UV) region have not been reported. As light sources possessing wavelengths at the UV scale are esse...

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Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

Cited by 15 publications

References 26 publications

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

Growth Mechanism of Exfoliable GaN by van der Waals Epitaxy on Wrinkled Hexagonal Boron Nitride

GaN Ultraviolet Laser based on Bound States in the Continuum (BIC)

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