Double self-aligned contact patterning scheme for 3D stacked logic and memory devices
Benjamin Vincent,
Sandy Wen,
Joseph Ervin
Abstract:This paper presents a new patterning scheme that allows self-alignment of active area contacts at different z-elevations. This patterning approach can be used for various types of 3D logic and memory devices. From an incoming structure using a stack of materials with different etch selectivity, some local metal braces are first introduced at certain targeted elevations and provide a first level of contact to active device materials. The brace formations require diverse etch selectivity for the selected dielect… Show more
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