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2021
DOI: 10.1063/5.0068114
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Double-resonant-tunneling-diode patch-antenna oscillators

Abstract: The concept of on-chip double-resonant-tunneling-diode (RTD) patch-antenna oscillator has the virtues of compactness, simplicity, high isolation from the external circuitry, and increased output power. Relying on this concept, we demonstrate an order of magnitude increase in the output power compared to previous reports on patch-antenna RTD oscillators: 10 μW at the fundamental frequency of 525 GHz and 70 μW at 330 GHz. Estimates show that significantly higher frequencies and powers are achievable with this ty… Show more

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Cited by 15 publications
(12 citation statements)
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“…Table I shows state-of-the-art THz sources using RTDs, for comparison with the results [11]- [16]. We propose arraying active antennas with integrated patch antennas and RTDs, as a compact and high-power THz source.…”
Section: Discussionmentioning
confidence: 99%
See 2 more Smart Citations
“…Table I shows state-of-the-art THz sources using RTDs, for comparison with the results [11]- [16]. We propose arraying active antennas with integrated patch antennas and RTDs, as a compact and high-power THz source.…”
Section: Discussionmentioning
confidence: 99%
“…The two RTDs are arranged in mirror symmetry with respect to the center of the patch antenna and operate in push-pull mode [16], [22]. During oscillation, a standing wave node of f osc is formed in a direction perpendicular to a straight line passing through the center of the patch antenna and connecting the two RTDs.…”
Section: Single Antenna With Two Rtdsmentioning
confidence: 99%
See 1 more Smart Citation
“…(8). Detailed information on similar RTDs with 1.6 nm barriers has been presented in [25]. The PP waveguide cross section of our devices is shown in Fig.…”
Section: Fabricationmentioning
confidence: 99%
“…We sketch the working point at the center of the third-order I -V curve together with the corresponding dc and ac load lines. Blue and green curves show the theoretical and experimental I -V curves, respectively, of an RTD with 1.6-nm barriers studied in [7]. The point 0 indicates an idealized position of the current and bias zero point to minimize the dc power of an RTD with a third-order I -V curve.…”
Section: A Third-order Approximation For Rtd I -V Curvementioning
confidence: 99%