Double pulse heterothermal technology for the formation of domain structures in ferroelectrics

Abstract

The wide application of photonic crystals on the basis of regular domain structures (RDS) in photon ics, nonlinear optics, and information and computer technologies is hampered by the long term technolog ical cycle of their formation by the existing methods. The method of RDS formation based on the use of an inhomogeneous electric field produced by structured electrodes [1,2], the method of "drawing the domain pattern" by an electron beam [3,4], and other meth ods are hardly applicable for mass production of pho tonic crystals. The promising methods are those that have the minimum duration of the technological cycle and make it possible to churn out such products.Another problem to be solved is the control of domain sizes in the process of exploitation of such RDS devices. Multiple formation of the domain pat tern of a given configuration by the methods employ ing photolithography during exploitation of these devices does not seem possible.In 2007, we proposed a thermal interference prin ciple of RDS formation by means of a temperature field having a heterothermal character (of the temper ature lattice), which makes possible local domain switching by a homogeneous electric field [5]. Accord ing to this principle, the local stimulation of domain switching is attained by means of a temperature lattice produced by a pulsed action of interfering waves. This approach makes it possible to decrease substantially the time of forming an RDS of the head to tail type as compared to the methods of [1, 3, 6] and avoid the restrictions caused by diffraction, which are inherent to the method of [7].The thermal interference principle makes it possi ble to create a technology based on combined action of two pulses on a ferroelectric: interfering (electromag netic or acoustic) waves, which produce the tempera ture lattice, and a homogeneous electric field, which provides selective domain switching (Fig. 1). On the basis of this principle, optical interference [8] and acoustic interference [9, 10] methods of RDS forma tion have been proposed and studied.Abstract-A technology for the formation of one and two dimensional structures by means of interfering (electromagnetic or acoustic) waves and a homogeneous electric field has been proposed. This technology has made it possible to retune the spatial period of the structure during its operation by varying the frequency of interfering waves and the angles of their incidence onto a crystal. It has been shown that the duration of the technological cycle slightly exceeds the domain switching time. The technology is applicable to crystals of LiNbO 3 , KTiOPO 4 (with a high potassium content), and some others. P E t i t t s t Fig. 1. Pulses of the wave power density P and the inverting electric field E.

Quick Formation of Micro- and Nanodomain Structures in Ferroelectrics by Microwave Ultrasound Interference

“…(9) and (10), a reduction of the value of P G is possible, in particular, due to a reduction of the value of T . At the same time, a local domain switching with small T values is possible in cases of an abrupt temperature dependence of the coercive field.…”

“…The propagation of ultrasound waves through a matter does not lead to an increase of excited carrier concentration, because the energy of a quantum of microwave ultrasound is by 5-6 orders of magnitude less than the energy of light quantum. The acoustic-interference method for a local domain switching under an applied uniform electric field is one of possible ways to advance the thermo-interference method [8] and the double pulse heterothermal technology [9].…”

“…Development of methods for formation of regular domain structures (RDS), which does not use photolithography [1][2][3][4][5][6][7][8][9], represents a special interest as regards their mass production. However, methods for RDS formation based on the use of the atomic force microscope (AFM) tip or an electron-beam probe by scanning back and forth over the surface demand a long work cycle duration because of the consecutive character of the scanning process; besides, they form RDS only in the superficial layer [1][2][3][4].…”

Технология Создания Сегнетоэлектрических Фотонных И Фононных Кристаллов

“…Очевидно, что при неоднородном распределении интенсивности в сечении волновых пучков (следовательно, различной глубине прорастания доменов) возможно формирование 3D-структур [24]. Кроме того, при использовании волновых пучков с неплоским волновым фронтом возможно формирование апериодических ФК.…”

“…Импульсная гетеротермальная технология (БИГ-технология) основана на термоинтерференционном принципе и ориентирована на массовое производство сегнетоэлектрических ФК без применения структурированных электродов [24]. БИГ-технология предполагает комбинированное воздействие на монодоменный сегнетоэлектрик двух импульсов: 1) интерференционного импульса с плотностью мощности P v и 2) импульса однородного электрического поля с напряженностью Е ≤ Е С (где Е С -коэрцитивное поле сегнетоэлектрика при комнатной температуре).…”