Double pocket architecture using indium and boron for sub-100 nm MOSFETs

Odanaka, S.; Hiroki, Akihiro; Yamashita, Koji; Nakanishi, K.; Noda, T.

doi:10.1109/55.930681

Cited by 6 publications

References 11 publications

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Predictive Monte Carlo ion implantation simulator from sub-keV to above 10 MeV

Tian

2003

Journal of Applied Physics

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In this paper is reported a general and accurate binary-collision-approximation- (BCA-)based Monte Carlo ion implantation model for implants into crystalline silicon. The combination of an improved semiempirical electronic stopping power model and Ziegler-Biersack-Littmark universal potential enables us to simulate a wide variety of implant species with only two different electronic stopping parameters for different implant species. With the model parameters fixed for a given implant species, excellent agreement is found with experimental secondary ion mass spectroscopy data for the energy range from sub-keV to above 10 MeV, and for different implant directions including random equivalent orientation, 〈100〉, 〈111〉, and 〈110〉 channeling directions. When compared with other BCA-based Monte Carlo simulators, it is demonstrated that more accurate results can be obtained for ultralow energy and very high energy implants. Furthermore, it is shown that, while the existing ion implantation simulators with the electronic stopping power based on the effective charge theory fail to predict the long tails of the deeply channeled implant species (such as Al), our model can predict these long tails successfully. Finally, an efficient damage model is also presented, which requires only one additional free parameter to accurately account for the damage accumulation and dechanneling effect. For high dose implants, substantial speed improvement over MARLOWE-based Monte Carlo simulators is observed.

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