Double-Heterostructure Resonant Tunneling Transistors of Surface-Functionalized Sb and Bi Monolayer Nanoribbons

Abstract

Zigzag nanoribbons tailored from chemically surface-modified Sb or Bi monolayers by methyl, amino or hydroxyl are investigated through first-principles electronic-structure calculations to explore their potential applications in topological transport nanoelectronics. It is verified by Dirac-point-like energy dispersion of band-edges near Fermi level that the scattering-forbidden edge-states of these nanoribbons can give a topological conductive channel with extremely high electron mobility. Accordingly, Sb/SbXHn/Sb and Bi/BiXHn/Bi nanoribbon double-heterostructures (SbXHn or BiXHn: XHn = CH3, NH2, OH) are designed as resonant tunneling transistors and modeled by bipolar transport devices with their electron transport characteristics being calculated by nonequilibrium Green’s function combined first-principles schemes. Ballistic equilibrium conduction spectra and current-voltage characteristics prove that quantum conductance currents of these nanoribbon double heterostructures originate from the electron resonant tunneling between the topological edge-states of the two constituent Sb or Bi monolayer nanoribbons through the central barrier of SbXHn or BiXHn nanoribbon segment. This renders a high resonant current peak with strong negative differential conductance, thus being competent for zero-loss and ultrahigh-frequency resonant tunneling nanotransistors.