Double Heterostructure Based on ZnO and Mg&lt;sub&gt;x&lt;/sub&gt;Zn&lt;sub&gt;1-x&lt;/sub&gt;O

Ohtomo, A.; Kawasaki, Megumi; Koida, Takashi; Koinuma, H.; Sakurai, Yasuhisa; Yoshida, Yasuhiko; Sumiya, Masatomo; Fuke, Shunro; Yasuda, Tadashi; Segawa, Y.

doi:10.4028/www.scientific.net/msf.264-268.1463

Cited by 38 publications

(21 citation statements)

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“…ZnO has also been used for short wavelength laser devices 36 , high power and high frequency electronic devices 37 , and light-emitting diodes (LED) [38][39] . ZnO shows many advantages: (i) it has a larger exciton energy (60 meV) than GaN (23 meV); (ii) the band-gap is tunable from 2.8 to 4 eV 40,41 ; (iii) wet chemical synthesis is possible; (iv) low power threshold at room temperature; (v) dilute Mn doped ZnO shows room temperature ferromagnetism 42 . Recently, quantum size effects on the exciton and band-gap energies were observed in semiconductor nanocrystals 43,44 .…”

Section: Zno Nanocrystalmentioning

confidence: 99%

Soft x-ray spectroscopy study of nanoscale materials

Guo

2005

Physical Chemistry of Interfaces and Nanomaterials IV

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The ability to control the particle size and morphology of nanoparticles is of crucial importance nowadays both from a fundamental and industrial point of view considering the tremendous amount of high-tech applications. Controlling the crystallographic structure and the arrangement of atoms along the surface of nanostructured material will determine most of its physical properties. In general, electronic structure ultimately determines the properties of matter. Soft X-ray spectroscopy has some basic features that are important to consider. X-ray is originating from an electronic transition between a localized core state and a valence state. As a core state is involved, elemental selectivity is obtained because the core levels of different elements are well separated in energy, meaning that the involvement of the inner level makes this probe localized to one specific atomic site around which the electronic structure is reflected as a partial density-ofstates contribution. The participation of valence electrons gives the method chemical state sensitivity and further, the dipole nature of the transitions gives particular symmetry information. The new generation synchrotron radiation sources producing intensive tunable monochromatized soft X-ray beams have opened up new possibilities for soft X-ray spectroscopy. The introduction of selectively excited soft X-ray emission has opened a new field of study by disclosing many new possibilities of soft X-ray resonant inelastic scattering. In this paper, some recent findings regarding soft Xray absorption and emission studies of various nanostructured systems are presented.

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Section: Zno Nanocrystalmentioning

confidence: 99%

Soft x-ray spectroscopy study of nanoscale materials

Guo

2005

Physical Chemistry of Interfaces and Nanomaterials IV

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“…In addition, multi-functionality of ZnO, such as large bandgap energy of 3.3eV for transparent electronics [4] and piezoelectricity for actuator [5], would be interesting for hybridization devices. From the viewpoint of biomedical applications, less hazardousness of oxides has attracted a great deal of attention, where other compound semiconductors cannot work.Recent progress on epitaxial growth of ZnO based semiconductors has been performed by molecular beam epitaxy (MBE) [6,7], pulsed laser deposition (PLD) [8,9] and metalorganic vapor phase epitaxy …”

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confidence: 99%

Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devices

Ogata¹,

Komuro²,

Hama³

et al. 2004

Physica Status Solidi (b)

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Undoped ZnO layers grown by molecular beam epitaxy (MBE) were investigated aiming at biosensing devices based on organic/inorganic hybrid structures. Clear observation of free exciton emission in low temperature photoluminescence (PL) spectra and electron mobility as high as 114 cm 2 /Vs at room temperature indicate that the quality of the ZnO layers is applicable for biosensors. Surface bonding of the ZnO the layers, which is one of the key issues for hybridization, was examined by means of xray photoelectron spectroscopy (XPS). The XPS spectra of O 1s revealed that formation and desorption of hydroxyl (OH) bonds can be controlled by air exposure and thermal treatments. , establishment of hybridization between biofunctionalized molecules and inorganic semiconductor systems is of high importance. Until now, Si-based FETs are mainly utilized for them, however, compound semiconductors should be another candidates. In termes of fabrication of hybridized structures, their controllability of bandgap energies and lattice constants, which resulted in realization of laser diodes and high electron mobility transistors (HEMTs), would possess several potential. Among lots of compounds, i.e., numerous combinations of elements, we have chosen zinc oxide (ZnO) based semiconductors as materials for EnFET and biochemical sensors from the following reasons.One of the advantages of ZnO is expected to easily form direct bonding between organic molecules and the oxide surface. In case of non-oxide compounds, surface cleaning is necessary for precise bonding control, which can be realized by the removal of unintentionally formed amorphous oxide layer at the surface, while oxide surfaces are free from that. Considering that direct binding of biofunctional molecules on insulating gate layers in FETs is preferable for signal processing, availability of crystalline insulating layers of oxides is crucial for hybridization. Also it is expected that the techniques of selfassembled monolayer formation using organothiols on gold [3] would be applicable on oxide surfaces by the reaction between cation in oxide and S in molecules. In addition, multi-functionality of ZnO, such as large bandgap energy of 3.3eV for transparent electronics [4] and piezoelectricity for actuator [5], would be interesting for hybridization devices. From the viewpoint of biomedical applications, less hazardousness of oxides has attracted a great deal of attention, where other compound semiconductors cannot work.Recent progress on epitaxial growth of ZnO based semiconductors has been performed by molecular beam epitaxy (MBE) [6,7], pulsed laser deposition (PLD) [8,9] and metalorganic vapor phase epitaxy

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“…ZnO has also been used for short wavelength laser devices [92], high-power and high-frequency electronic devices [93], and light-emitting diodes (LEDs) [94,95]. ZnO shows many advantages: (i) it has a larger exciton energy (60 meV) than GaN (23 meV); (ii) the bandgap is tunable from 2.8-4 eV [96,97]; (iii) wet chemical synthesis is possible; (iv) low power threshold at room temperature; and (v) dilute Mn doped ZnO shows room temperature ferromagnetism [98]. Recently, quantum size effects on the exciton and bandgap energies were observed in semiconductor nanocrystals [99,100].…”

Section: Zno Nanocrystalmentioning

confidence: 99%

Soft X‐Ray Absorption and Emission Spectroscopy in the Studies of Nanomaterials

Guo¹

2010

X‐Rays in Nanoscience

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Double Heterostructure Based on ZnO and Mg<sub>x</sub>Zn<sub>1-x</sub>O

Cited by 38 publications

References 0 publications

Soft x-ray spectroscopy study of nanoscale materials

Soft x-ray spectroscopy study of nanoscale materials

Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devices

Soft X‐Ray Absorption and Emission Spectroscopy in the Studies of Nanomaterials

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