We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.The interplay between quantum optics and mesoscopic physics opens up new horizons for investigating radiation produced in nanoscale conductors [1,2]. Microwave photons emitted from quantum conductors are predicted to show non-classical behavior such as anti-bunching [3] and entanglement [4]. Experimental investigations of such systems require sensitive, high-bandwidth detectors operating at microwave-frequency [5]. On-chip detection schemes, with the device and detector being strongly capacitively coupled, offer advantages in terms of sensitivity and large bandwidths. In previous work, the detection mechanism was implemented utilizing photon-assisted tunneling in a superconductor-insulator-superconductor junction [6,7] or in a single quantum dot (QD) [8].Aguado and Kouwenhoven proposed to use a double quantum dot (DQD) as a frequency-tunable quantum noise detector [9]. The idea is sketched in Fig. 1(a), showing the energy levels of the DQD together with a quantum point contact (QPC) acting as a noise source. The DQD is operated with a fixed detuning δ between the electrochemical potentials of the left and right QD. If the system absorbs an energy E = δ from the environment, the electron in QD1 is excited to QD2. This electron may leave to the drain lead, a new electron enters from the source contact and the cycle can be repeated. The process induces a current flow through the system. Since the detuning δ may be varied continuously by applying appropriate gate voltages, the absorbtion energy is fully tunable.The scheme is experimentally challenging, due to low current levels and fast relaxation processes between the QDs [10]. Here, we show that these problems can be overcome by using time-resolved charge-detection techniques to detect single electrons tunneling into and out of the DQD. Apart from giving higher sensitivity than conventional current measurement techniques, the method also allows us to directly relate a single-electron tunneling event to the absorbtion of a single photon. The system can thus be viewed as a frequency-selective single- * Electronic address: simongus@phys.ethz.ch