Dot size variability induced changes in the optical absorption spectra of interdiffused quantum dot systems

Sinha, S. S. K.; Kumar, Somesh; Das, Mausumi

doi:10.1007/s00339-019-3050-6

Cited by 6 publications

(5 citation statements)

References 51 publications

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“…The high-temperature post-growth annealing of heterostructures is useful for the engineering of semiconductor devices because it allows band-gap structure modification [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ] and an oscillator strength [ 10 , 11 ], controls hyperfine interaction [ 12 ], adjusts the dephasing time of excitons [ 13 ], and reduces strain gradients [ 14 , 15 , 16 , 17 , 18 , 19 ]. For III-V semiconductor heterostructures, the changes occurring at the annealing are based on the intermixing that proceeds via the vacancy-mediated mechanism in which the atom jumps into a vacancy induced by high-temperature heating at a neighboring lattice site [ 2 , 3 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

et al. 2023

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The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at annealing temperatures forms a charge-carrier density gradient along a heterostructure. The nonuniform spatial distribution of charged vacancy concentration that appears as a result of strong dependence in the vacancy formation rate on the local charge-carrier density is revealed. A model of vacancy-mediated diffusion at high temperatures typical for post-growth annealing that takes into account this effect and dynamics of nonequilibrium vacancy concentration is developed. The change of atomic diffusivity rate in time that follows on the of spatial vacancy distribution dynamics in a model heterostructure with quantum wells during a high-temperature annealing at fixed temperatures is demonstrated by computational modeling.

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Section: Introductionmentioning

confidence: 99%

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

et al. 2023

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“…The electron (hole) confinement energy as a function of aspect ratio (σ = h QD /b QD ) can be written as [29,30]-…”

Section: Theoretical Details and Model Formationmentioning

confidence: 99%

“…Similarly, the electron (hole) confinement energy due to interdiffusion in the growth direction is defined by a parabolic well [29]-…”

Section: Theoretical Details and Model Formationmentioning

confidence: 99%

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Effect of capping rate on the performance of InAs/GaAs quantum dot solar cell

Rai

2024

Phys. Scr.

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The GaAs capping layer significantly influences the structural and optoelectronic characteristics of the InAs quantum dot (QD). The capping rate modifies the essential parameters, size, shape, and composition that determine the optical properties of the QDs. In this work, we present a theoretical model to study the effects of the capping rate on the absorption spectra of InAs dots embedded in the GaAs capping layer. The proposed model can be used for optimizing the structural and optical characteristics of InAs/GaAs QDs without using an annealing procedure or any capping material other than GaAs. In addition,

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“…In heterostructures with quantum dots and quantum wells at high temperature, the vacancy formation leads to the material intermixing via a vacancy-mediated diffusion [14,15]. The intermixing permits modifying the energy structure [14][15][16][17][18], controls hyperfine interaction [19], adjusts exciton lifetime [17,20], and reduces strain gradients [21,22] in low dimensional structures.…”

Section: Introductionmentioning

confidence: 99%

Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

Шамирзаев

Atuchin

2023

Nanomaterials

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The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.

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Dot size variability induced changes in the optical absorption spectra of interdiffused quantum dot systems

Cited by 6 publications

References 51 publications

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

Effect of capping rate on the performance of InAs/GaAs quantum dot solar cell

Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures

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