Dosimetric features, kinetics and mechanisms of thermoluminescence of tanzanite

Chithambo, M.L.; Folley, D.E.

doi:10.1016/j.physb.2020.412435

Cited by 4 publications

(2 citation statements)

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“…With a rising concentration of Pr 3+ ions, the strength of the peak maximum of TL glow curves at 174K is found to decrease. The peaks move to the higher temperature side at a higher heating rate [ 12,16–20 ] is evident from these curves. It is clear that the glow curves are comparatively less diffuse at the higher heating rate.…”

Section: Resultsmentioning

confidence: 99%

Thermally Stimulated Properties of Zinc Selenide Doped with Pr and (Ag,Pr) Phosphors

Mishra

Pandey

et al. 2023

Macromolecular Symposia

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The evaluation of trapping parameters activation energy, frequency factor, electron's life time in traps, capture cross-section, kinetics order, etc. are the most important studies in the field of themoluminescence. The thermoluminescence (TL) properties of Pr and (Ag, Pr) doped ZnSe phosphors are studied at three uniform heating rates between the temperature of 130K and 370K after excitation by UV radiation (365 nm). Trapping parameters of these phosphors have been determined and its nature is discussed.

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Section: Resultsmentioning

confidence: 99%

Thermally Stimulated Properties of Zinc Selenide Doped with Pr and (Ag,Pr) Phosphors

Mishra

Pandey

et al. 2023

Macromolecular Symposia

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“…An important application of TL solid state dosimetry of ionizing radiation for the dating of archaeological and geological specimens. [13][14][15][16][17]18,19,[20][21][22]11,12] Zinc selenide doped with Sn and (Sn, Dy) has been researched due to its scientific and commercial significance. The present paper focuses on photoluminescence (PL), EL, and TL) studies of the synthesized ZnSe: Sn and ZnSe: (Sn, Dy) phosphors as fine crystalline powders.…”

Section: Introductionmentioning

confidence: 99%

Luminescence in Zinc Selenide Doped with Sn and (Sn, Dy) Phosphors

Mishra,

Pandey

2024

Macromolecular Symposia

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Zinc selenide doped with Sn and (Sn, Dy) phosphors has been prepared by firing the samples in an atmosphere of nitrogen gas. The voltage and frequency dependence of electrolyte brightness has been studied. Voltage dependence of electroluminescence (EL) brightness reveals an acceleration collision mechanism in the Schottky barrier at the metal–semiconductor interfaces. EL and photoluminescence (PL) spectra and thermoluminescence (TL) glow curves of these phosphors have also been recorded to understand the nature and mechanism involved in the luminescence process. The trapping parameters are calculated for the glow curves of these phosphors.

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