Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation

Martin, E.; Nuns, T.; David, Jean‐Pierre; Gilard, O.; Boutillier, M.; Penquer, A.

doi:10.1109/tns.2011.2132739

Cited by 10 publications

(4 citation statements)

References 26 publications

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“…Martin et al have reported the ionization-induced dark current increase in the linear CCDs and demonstrated the impact of the sensor operational conditions and dose rate, revealing an ELDRS-like effect. 4 Zujun Wang et al have examined the dark signal degradation of the linear or array CCDs dependence on dose rates, and the effect of biased versus unbiased condition during radiation exposure. [5][6][7] Though these articles have studied the dose rate effects on the CCDs, they mainly focus on the dose rate effects on the degradation of dark signal in the CCDs.…”

Section: Introductionmentioning

confidence: 99%

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Wang

Chen

et al. 2015

AIP Advances

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The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.

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Section: Introductionmentioning

confidence: 99%

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Wang

Chen

et al. 2015

AIP Advances

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“…[1][2][3][4][5] Displacement damage is usually caused by energetic particles such as protons and neutrons. Proton displacement damage effects on CCDs have also been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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“…It has been shown that there are some peculiarities in the formation of radiation-induced defects in the active regions of Si-based devices. [4][5][6][7] Some attempts have been undertaken to explain the observed effects in the irradiated devices, which have been only partially successful. [4,7] Many Si-based devices, such as Si particle detectors and CCD image sensors, are subjected to irradiation with high-energy particles when in the active regimes, [3,6,7] usually under reverse bias.…”

mentioning

confidence: 99%

“…[4][5][6][7] Some attempts have been undertaken to explain the observed effects in the irradiated devices, which have been only partially successful. [4,7] Many Si-based devices, such as Si particle detectors and CCD image sensors, are subjected to irradiation with high-energy particles when in the active regimes, [3,6,7] usually under reverse bias. Therefore, a detailed understanding of radiation-induced processes in the active regions of such devices is required.…”

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confidence: 99%

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n⁺–p Diodes upon Irradiation with Alpha Particles

Aharodnikau

Ластовский

Shpakovski³

et al. 2021

Physica Status Solidi (a)

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Results of a study of changes in electrical characteristics of n+–p diodes on boron‐doped epi‐silicon induced by irradiation with alpha particles under applied reverse bias voltages are presented. It is found that the irradiation results in a significantly lower introduction rate of carrier‐compensating radiation‐induced defects (RIDs) in the space charge region of the reverse‐biased structures compared with those in the neutral base region and in similar diodes irradiated without bias. The dominant hole and electron emission signals in the capacitance transient spectra of the irradiated diodes are characterized and identified with energy levels of some known RIDs in moderately doped p‐type Si:B. Changes in concentration of the defects are monitored after postirradiation minority carrier injection and thermal treatments. It is argued that the observed effect of the reduced concentration of RIDs in the space charge regions of the diodes is related mainly to some specific features of the silicon self‐interstitials (ISi): a very strong dependence of their thermal stability on the charge state and a highly enhanced mobility in p‐type Si under minority carrier injection conditions. The activation energy of electron emission from the doubly positively charged state of ISi is determined.

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Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation

Cited by 10 publications

References 26 publications

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n⁺–p Diodes upon Irradiation with Alpha Particles

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Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation

Cited by 10 publications

References 26 publications

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles

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The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n⁺–p Diodes upon Irradiation with Alpha Particles