Doping silicon with erbium by recoil implantation

Feklistov, K. V.; Abramkin, D. S.; Obodnikov, V.I.; Popov, V.

doi:10.1134/s1063785015080209

Cited by 8 publications

(4 citation statements)

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“…Erbium ions (Er 3+ ) have radiative emissions at 1.54 µm which is in the telecommunication wavelength band for long haul optic fibers. [5][6][7][8] Introducing erbium ions (often with oxygen) into silicon by ion implantation was believed to be one of most promising approaches [8][9][10] among others [11][12][13][14][15][16] to create silicon-based lasers. However, during the standard rapid thermal treatment, erbium dopants aggregate to form clusters that are efficient nonradiative recombination centers.…”

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confidence: 99%

“…The sharp luminescence at 1.54 μm with a narrow full width at half maximum (FWHM, ~25 nm) represents the characteristic 4f transition of Er 3+ . [5][6][7][8][9][10] The temperature-dependent PL of the RTA-processed samples is shown in Supplementary Fig. 2a.…”

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confidence: 99%

“…17,18 The aggregation of Er ions forms efficient nonradiative clusters that strongly suppress the emission of Er ions at room temperature. [5][6][7][8][9][10] The dramatic cooling of the DC process can freeze the dispersed Er dopants at high temperature (950 ℃) in an ultrashort time (possibly micro seconds), which helps prohibit the aggregation of Er ions. The cross-sectional TEM images show that Er nanocrystals as large as ~5 nm in diameter are clearly visible in the RTA-treated samples (Fig.…”

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Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Wen

Hong

et al. 2020

Advanced Optical Materials

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A silicon light source at the communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium and oxygen ions is considered one of the most promising approaches to produce silicon light sources. However, this method suffers from a high concentration of defects in the form of nonradiative recombination centers at the interface between the crystalline silicon and large Er2O3/ErSi1.7 precipitates during the standard rapid thermal treatment. Here, a deep cooling process is applied to suppress the growth of these precipitates by flushing the high‐temperature Er/O‐doped silicon substrates with helium gas cooled in liquid nitrogen. The resultant light‐emitting efficiency at room temperature is enhanced by two orders of magnitude in comparison with that of the sample treated via standard rapid thermal annealing. The deep‐cooling‐processed Si samples are further processed into light‐emitting diodes. Bright electroluminescence with a main spectral peak at 1536 nm is also observed from the silicon‐based diodes with the external quantum efficiency reaching ≈0.8% at room temperature. Based on these results, the development of electrically driven silicon optical amplifiers or even lasers at communication wavelengths is promising for monolithically integrated silicon photonics.

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Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Wen

Hong

et al. 2020

Advanced Optical Materials

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“…One of the technological issues consists in the difficulty of achieving strong doping for erbium atoms in the optically active state [1]. High implantation doses exceeding 1.3 × 10 18 cm −3 induce a linear growth in the concentration of erbium precipitates [2], and several methods have been attempted to overcome such limitation, including recrystalization of preliminarily amorphized silicon [3,4], growth of erbium-doped silicon films by molecular beam epitaxy (MBE) [5], and recoil implantation [6]. Recently, high luminescence efficiency and energy transfer have been demonstrated from Er ions implanted in SiO x films when co-doped with either gold [7] or SnO 2 nanocrystals [8], as well as in amorphous Si nanodots [9] and in silicon nanocrystals [10].…”

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Room-temperature 1.54 $μ$m photoluminescence of Er:O$_x$ centers at extremely low concentration in silicon

Celebrano,

Ghirardini,

Biagioni

et al. 2017

Preprint

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The demand for single photon sources at λ = 1.54 µm, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O x centers in Si still a viable resource thanks to the optical transition of Er 3+ : 4 I 13/2 → 4 I 15/2 . Yet, to date, the implementation of such system remains hindered by its extremely low emission rate. In this Letter, we explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of Er:O x in Si. The emitted photons, excited by a λ = 792 nm laser in both large areas and confined dots of diameter down to 5 µm, are collected by an inverted confocal microscope. The lower-bound number of detectable emission centers within our diffraction-limited illumination spot is estimated to be down to about 10 4 , corresponding to an emission rate per individual ion of about 4 ×10 3 photons/s.

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Fluorescence optimization and ratiometric thermometry of near-infrared emission in erbium/oxygen-doped crystalline silicon

Zhang

Hong²,

Wen³

et al. 2022

Journal of Luminescence

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Doping silicon with erbium by recoil implantation

Cited by 8 publications

References 11 publications

Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling

Room-temperature 1.54 $μ$m photoluminescence of Er:O$_x$ centers at extremely low concentration in silicon

Fluorescence optimization and ratiometric thermometry of near-infrared emission in erbium/oxygen-doped crystalline silicon

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