Doping Profile Optimization for Power Devices Using Topology Optimization

Nomura, Katsuya; Kondoh, Tsuguo; Ishikawa, Tsuyoshi; Yamasaki, Shintaro; Yaji, Kentaro; Fujita, Kikuo

doi:10.1109/ted.2018.2854637

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2024

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“…However, it is difficult to balance both because a higher mobility enhances the conductivity of the material, resulting in a small on-resistance and a large leakage current. Therefore, the device structure should be optimized to achieve the maximum performance [8]. Another method to improve device performance is to enhance the mobility by applying mechanical stress [9]- [12].…”

Section: Introductionmentioning

confidence: 99%

Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes

Sugiura,

Yamashita,

Nakano

2024

IEEE Open J. Power Electron.

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This paper discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode, are evaluated. On PiN diode of bipolar diode, stress changes the carrier mobilities in the material; that is, the mobility is enhanced by the piezoresistive effect, which works as the minimized on-resistance or leak current. Simulation results show that compressive stress can have a positive effect on device operation, particularly in p + -substrate power diodes. For JBS diode, the GPa-order tensile stress brings good effects to both the forward and the reversed characteristics. Using the cantilever structure is suitable for JBS diode, and press-pack packaging for PiN diodes have the potential to enhance the device characteristics.

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Section: Introductionmentioning

confidence: 99%