Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Shestakov, A. K.; Журавлев, К. С.; Arykov, Vadim S.; Kagadei, V. A.

doi:10.1109/sibircon.2010.5555371

Cited by 1 publication

(2 citation statements)

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“…Integration then determines the current Jx at the source and drain electrodes, in order to establish the analytical expression of the current Id. The current Id at the terminals of the device is generally calculated by integrating the total current density Jtot over an appropriate surface in each contact zone (8).…”

Section: Numeric Simulationmentioning

confidence: 99%

“…Important efforts have been deployed to increase the power and frequency performance of MESFET-GaAs and MESFET-GaN [4], [5]. The structures for these MESFET's are manufactured by two methods: ion-implantation and epitaxial grow [6], [7], the output characteristics of ion-implanted transistors are highly dependent on the quality of the substrate [6]- [8], for MOSFET, N2O is the thin insulator deposition procedure used in the dielectric polysilicon gate of thin film transistors to achieve SiO2 layers at temperatures below 150°C [9].…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependent analytical model for submicron GaAs-MESFET

Djouder¹,

Benfdila²,

Lakhlef³

2021

Bulletin EEI

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MESFET are used in circuitsof gigahertz frequencies as they are based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and output transconductance of a 0.3μm gate MESFET with temperature dependence is proposed. The model is validated by comparing the results of the proposed model and those of the numerical simulation. The parameter values are computed using an intrinsic MESFET of two-dimensional geometry. In this work, the distribution of different output loads for varied applied voltages is considered. Simulation results obtainedunder temperature variation effectsfor load distribution and applied driven voltage variation are considered. The RMS and average errors between the different models and GaAs MESFET simulations are calculated to evidence the proposed model accuracy. This was demonstrated by a good agreement between the proposed model and the simulation results, which are found in good agreement. The simulation results obtained under temperature variations were discussed and found to complement those obtained in the literature. This clarifies the relevance of the suggested model analytical.

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Section: Numeric Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%