Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen,
Hsin-Ying Tseng,
Hesameddin Ilatikhameneh
et al.
Abstract:Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces. This work shows that the original THJ-TFET design with 12 nm body thickness has poor performance, because its sub-threshold swing is 50 mV/dec and the ON-current is only 6 µA/µm. To improve the performance, the doping profile of THJ-TFET is engineered to boost the resonant tu… Show more
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