2017
DOI: 10.1016/j.mssp.2016.10.054
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Doping of silicon nanocrystals

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Cited by 37 publications
(27 citation statements)
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“…For this reason, the possibility to introduce dopants has been explored in order to improve transport and other fundamental characteristics [78,79].…”
Section: Matrix-embedded Nanocrystalsmentioning
confidence: 99%
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“…For this reason, the possibility to introduce dopants has been explored in order to improve transport and other fundamental characteristics [78,79].…”
Section: Matrix-embedded Nanocrystalsmentioning
confidence: 99%
“…The obtained results pointed out that the presence of impurities during the synthesis affects the growth kinetics of the Si-NCs, resulting in a wide size distribution that depends on the annealing temperature and on the nature and concentration of dopants. Doped Si-NCs with a diameter ranging from 2.7 to 3.8 nm, slightly larger than the corresponding undoped Si-NCs grown using the same annealing temperature, were prepared [79]. The doped Si-NCs showed good crystallinity and were well separated from each other in the matrix.…”
Section: Matrix-embedded Nanocrystalsmentioning
confidence: 99%
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“…Thus one expect that intentional doping with n‐ and p‐type impurities will play a critical role for the design and realization of novel devices based on Si‐NCs. Nevertheless several studies have revealed that doping in Si‐NCs is quite different from their bulk counterparts, for example the ionization of the impurities at room temperature may be strongly quenched with respect to the bulk and a shallow impurity level in bulk may become a deep level at the nanoscale. Moreover in the case of nanocrystals there are several possible impurity locations, that is within the nanocrystals, at their surface‐interface, or in the surrounding matrix, and it is difficult from the experimental point of view to obtain information about the exact dopant location.…”
Section: Introductionmentioning
confidence: 99%
“…It can be said that the effective passivation of silicon clusters (not only by hydrogen atoms) and diluting the silicon framework with the other atoms (e.g., germanium) to change their initial characteristics is an actual modern problem (see Refs. [ ]). In the presented study, we restrict ourselves to hydrogen doped silicon clusters Si 18 H 12 and Si 19 H 12 either pure or endohedral.…”
Section: Introductionmentioning
confidence: 99%