Doping of PbTe with Ga during Growth from the Vapour Phase

Abstract

In the present paper a method for doping of PbTe with Ga during crystal growth from the vapour phase is presented. The galvanomagnetic and photoelectric properties of the produced material are compared with results of other techniques and the equivalence of these physical properties is proved. Furthermore a defect model of the build‐in mechanism of Ga in PbTe is shown.

Carrier Transport and Non-Equilibrium Phenomena in Doped PbTe and Related Materials

“…PbTe(Ga) single crystals grown by means of a vapour-liquid-solid mechanism stay high-ohmic at GaTe contents in the melt higher than 3 mol% (corresponding to NGa x 7 x 1019 ~r n -~ in the crystal volume) [26]. The crystals grown from the vapour phase appear to be high-ohmic when the GaTe or Ga,Te3 content in the source material is equal to 10 mol% [27]. In the crystals obtained with the help of the Czochralski technique the conversion of the conductivity type occurs at N G , z IOl9 ~m -~.…”